1987
DOI: 10.1016/0022-0248(87)90182-5
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The growth of multicomponent oxide single crystals by stepanov's technique

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Cited by 14 publications
(6 citation statements)
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“…The latter can deliver crystals widely free of striation, cracks, extraneous phase inclusions, or bubbles and of high optical quality (variation of refractive index per cm crystal length: ∆n = 1-2 × 10 −5 cm −1 ). For the present study, a nominally pure, i.e., undoped, SBN crystal was grown by the aforementioned modified Stepanov technique, which has been described earlier [23][24][25]. All starting materials were of 4 N or better purity.…”
Section: Crystal Growthmentioning
confidence: 99%
“…The latter can deliver crystals widely free of striation, cracks, extraneous phase inclusions, or bubbles and of high optical quality (variation of refractive index per cm crystal length: ∆n = 1-2 × 10 −5 cm −1 ). For the present study, a nominally pure, i.e., undoped, SBN crystal was grown by the aforementioned modified Stepanov technique, which has been described earlier [23][24][25]. All starting materials were of 4 N or better purity.…”
Section: Crystal Growthmentioning
confidence: 99%
“…Miyazawa [51] grew relatively homogeneous Te-doped GaSb platelets by ''shaped melt lowering'', by pulling downwards. A capillary-controlled Czochralski/Stepanov method for growth of shaped crystals of Sr x Ba 1Àx Nb 2 O 6 of improved homogeneity was applied by Ivleva et al [52,53].…”
Section: Homogeneus Crystals With K Eff -1mentioning
confidence: 99%
“…[Borodin 1988, Bates 1992] Ca 3 (Nb,Ga) 2 Ga 3 O 12 [Voronkov 1988] Ca 3 VO 4 , Bi 12 SiO 20 , Bi 12 GeO 20 , Bi 4 Ge 3 O 12 , Nd 3 Ga 5 O 12 [Ivleva 1987] Ga 3 Gd 5 O 12 [Swartz 1974] GaAs [Egorov 1976] Gd 2 (MoO 4 ) 3 [Kurlov 1994] Ge , Kuznetsov 1980] Heavy metal halides [Dmitruk 1985, Dmitruk 1988 [Antonov 1990] NaNO 3 [Lin 1993] PbTe [Klimakow 1984] Rare earth orthovanadates [Kurlov 2005] Crystalline Si technology is clearly dominant in solar cell production today, with about 90% of the market, and will remain dominant for at least the next decade. Photovoltaics (PV) was and is the driving force for shaped Si crystal growth.…”
Section: Shaped S Imentioning
confidence: 99%