The growth of thin films of zinc tin phosphide

Sansregret, J. L.

doi:10.1016/0025-5408(81)90128-8

Cited by 9 publications

(4 citation statements)

References 7 publications

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“…Preparation of ZnSnP 2 thin films was reported by several methods such as co-evaporation [6], chemical vapor deposition (CVD) [7], molecular beam epitaxy (MBE) [8] and liquid phase epitaxy (LPE) [9]. The coevaporation method has difficulties in controlling the composition at the stoichiometric ratio of ZnSnP 2 .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ZnSnP2 thin films by phosphidation

2015

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a b s t r a c tZnSnP 2 is a promising candidate as a solar absorbing material consisting of earth-abundant and low-toxic elements. In this study, the phosphidation method, where co-sputtered Zn-Sn thin films react with phosphorus gas, was adopted for fabricating ZnSnP 2 thin films. To establish the conditions for producing ZnSnP 2 thin films, we investigated the influence of phosphidation temperature on the product phases, and interpreted the experimental results using chemical potential diagrams of the Zn-Sn-P system. ZnSnP 2 thin films with a single phase were obtained by phosphidation at 500°C under a phosphorus vapor pressure of 10 −2 atm. However, formation of ZnSnP 2 protrusions was observed on the surface of the thin films. Based on the experimental results and the chemical potential diagrams, it is indicated that un-reacted liquid Sn particles reacted with Zn and phosphorus gas to form ZnSnP 2 protrusions in a manner similar to the vapor-Liquid-Solid growth mode.

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Section: Introductionmentioning

confidence: 99%

Fabrication of ZnSnP2 thin films by phosphidation

2015

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“…Several methods have been explored for the preparation of ZTP in form of crystals and thin films using elemental Zn, Sn and P or in combination of Zn-P and Sn-P compounds as starting materials. They include melt solution growth [4,[13][14][15], flux method [9,10], thermal or electron-beam evaporation [2,11,12,16,17], molecular beam epitaxy [5], liquid phase epitaxy [18], phosphidation of Zn-Sn layers [8,19] and others [20], generally, involving high temperature ([ 600°C) and/or vacuum. In some of these methods, the processes are very tricky due to the complexity in thermodynamic phase formation and a large difference in the vapor pressure between Zn and Sn [21,22].…”

Section: Introductionmentioning

confidence: 99%

Structure, composition and photoconductivity analysis of zinc tin phosphide ternary compound nanoparticles synthesized by chemical method

Sivakumar

Peranantham

Kumar

et al. 2021

J Mater Sci: Mater Electron

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Zinc tin phosphide (ZTP) has attracted recent research interest as a low-cost light sensing material, alternative to III-V and II-III-based compounds, for photo-detector and solar cell applications. In this study, a versatile chemical route for the synthesis of ZTP nanoparticles starting from commercially available alkyl-zinc and tin, alkyl-phosphoramides and trioctylphosphine at a relatively low temperature of 160°C is reported, which can straightforwardly be extended to other analogous II-IV-P 2 group ternary compounds. The particles displayed high stability and can be deposited as layers with few monolayers of thickness. The structural and chemical analysis revealed that the particles are of sub-10 nm size with chalcopyrite structure and ZnSn-phosphide composition. The particles exhibited optical band-gap in the range of 1.65-1.75 eV and a broadband photo-response in the visible wavelengths (400-700 nm) with excellent response to red light.

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“…[8][9][10] In addition, a high absorption coefficient of about 10 5 cm À1 in the visible light region has been reported. 11,12 Although ZnSnP 2 thin films have been fabricated using several methods such as co-evaporation, 11,13,14 chemical vapor deposition, 15 liquid phase epitaxy, 16,17 molecular beam epitaxy, [18][19][20] and phosphidation, 21 solar cells based on ZnSnP 2 have not been investigated.…”

Section: Introductionmentioning

confidence: 99%