2006
DOI: 10.1016/j.cap.2006.01.034
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The growth of ZnO nano-wire by a thermal evaporation method with very small amount of oxygen

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Cited by 21 publications
(9 citation statements)
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“…The Zn:O atomic ratios are 1:0.862, 1:0.895, and 1:0.913 for the three products synthesized at a P O 2 of 0.10, 0.15, and 0.20 MPa, respectively. These results indicate that the products were nonstoichiometric and deficient in oxygen, which agrees with previously reported results regarding the preparation of mZnOw [11,14,20]. It was also found that the product had higher oxygen content when synthesized at a higher P O 2 , due to the greater amount of oxygen that is available to enters the ZnO crystal lattice and participates in the SHS reaction.…”
Section: Resultssupporting
confidence: 93%
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“…The Zn:O atomic ratios are 1:0.862, 1:0.895, and 1:0.913 for the three products synthesized at a P O 2 of 0.10, 0.15, and 0.20 MPa, respectively. These results indicate that the products were nonstoichiometric and deficient in oxygen, which agrees with previously reported results regarding the preparation of mZnOw [11,14,20]. It was also found that the product had higher oxygen content when synthesized at a higher P O 2 , due to the greater amount of oxygen that is available to enters the ZnO crystal lattice and participates in the SHS reaction.…”
Section: Resultssupporting
confidence: 93%
“…Each PL spectrum exhibited two significant emission peaks. One is a sharp, ultraviolet (UV) emission in the range of 375-380 nm corresponding to the nearband edge transition of a wide band gap, namely, the recombination of free excitons via an exciton-exciton collision process [3,11]; the other peak is a broad, green emission centered at ∼500 nm, which is probably due to both the transition between a singly ionized oxygen vacancy (V O + ) to a photoexcited hole [3,21] and the structure/surface defects [11,22]. The ratio in intensities of the intrinsic band gap of the UV emission and the defect-related green luminescence has been commonly used to evaluate the crystalline quality of ZnO [21,22].…”
Section: Resultsmentioning
confidence: 99%
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“…The band gap of ZnO is approximately 3.37 eV at room temperature which allows higher breakdown voltages and an ability to work as high electric field emitters. Structures made of ZnO possess gas sensitive properties, high excitonic binding energy with high thermal and chemical stabilities [1][2][3]. For those reasons, structures of ZnO have been considered as important components for applications of photocatalysts [4], gas sensors [5], ultraviolet (UV) light-emitting diodes (LED) and UV lasing [6,7], field emission devices [8], biological probes [9] and solar cells [10].…”
Section: Introductionmentioning
confidence: 99%
“…Various physical and chemical processes such as the gas evaporation [6][7][8], hydrothermal [9][10][11], sputtering [12,13], and sol-gel method [14][15][16][17] have been used to synthesize nanomaterials. However, these techniques are usually expensive and complicated.…”
Section: Introductionmentioning
confidence: 99%