The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

High quality of InAsSb epilayer with cutoff wavelength longer than 10μm grown on GaAs by the modified LPE technique

“…One expect that a single crystal be much better than polycrystal for device purposes due to strong unwanted scattering from grain boundaries in polycrystal which could greatly lower the electron mobility. However, our results of Hall measurements, shown in Table 2, reveal that the InAsSb/GaAs epilayers have a Hall mobility of 11,800 cm 2 /V s at RT, which is at the same level as those reported for single crystal InAsSb/GaAs grown by MBE [5] and MOCVD [14,15]. It is seen from the cross section image of the InAsSb/GaAs sample (the inset of Fig.…”

“…With the well-developed GaAs-on-Si technology, integration of large area focal plane array with silicon charge-coupled device (CCD) is possible, making GaAs an attractive substrate for the growth of InAsSb photodetectors. Epitaxial InAsSb films have been grown on GaAs substrate by molecular beam epitaxy (MBE) [4,5] and metalorganic chemical vapor deposition (MOCVD) [6,7]. Liquid phase epitaxy (LPE) technique is a simple, inexpensive and widely used growth method used to grow various heterostructures.…”

Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

“…2. This value of FWHM is much smaller than InAs 0.23 Sb 0.77 grown on GaAs by MOCVD (%300 arcsec) [4] and InAs 0.02 Sb 0.98 grown on GaAs by MBE (797 arcsec) [20]. This FWHM value is also smaller than the reported values of InAs 0.04 Sb 0.96 layers grown on InAs substrate by melt epitaxy (ME) [21], although the epilayers were grown rather thick (>100 lm) to eliminate the affect of lattice mismatch.…”

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

“…Однако следует помнить, что GaAs имеет самое большое рассогласование по постоянной решетке с InAs x Sb 1−x , которое может составлять от 7 до 14%, в зависимости от состава твердого раствора. Несмотря на это, метод молекулярно-лучевой эпитаксии (МЛЭ) позволяет выращивать пленки твердых растворов InAs x Sb 1−x на подложках GaAs, не уступающие по кристаллическому совершенству пленкам, выращенным на более дорогих подложках InSb, InAs, GaSb [7]. При этом GaAs является прозрачным в длинноволновой области ИК диапазона, что упрощает задачу совмещения эпитаксиальных структур с мультиплексорами.…”