The high power conversion efficiency of a two-dimensional GeSe/AsP van der Waals heterostructure for solar energy cells

Liu, Hong-Yao; Yang, Chuan‐Lu

doi:10.1039/d0cp05413e

Cited by 29 publications

(28 citation statements)

References 62 publications

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“…The PCE of the AsP/WSe 2 heterostructure is as high as 15%, comparable with A S P/MoS 2 (15.5%) and larger than AsP/WS 2 (13%). In addition, the PCE of the AsP/WSe 2 heterostructure is as greater than that as of AsP/CdSe heterostructure (13%), [12] slightly smaller than the GeSe/AsP heterostructure (16%) [66] and phosphorene/MoS 2 (16-18%). [68] The other heterostructures of AsP/MX 2 also have the characteristics of type-II band alignment, wide absorption, a large PCE, and some of them have a built-in electric field.…”

Section: Stabilities and Electronic Properties Of Type-ii Vdw Heteros...mentioning

confidence: 85%

“…Its E b is slightly larger than GeSe/AsP heterostructure, 0.11 eV. [ 66 ] It means that AsP/WSe 2 AB stacking vdW heterostructure has a small electron–hole recombination probability.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…In the case of vdW heterostructure absorbing photons, these will affect the characteristics of possible electron flow between donor and acceptor. [ 66 ] Therefore, AsP/WSe 2 vdW heterostructure combines the characteristics of type‐II band alignment, suitable band, and wide light absorption. It is a potential candidate material for high‐efficiency solar cell applications.…”

Section: Resultsmentioning

confidence: 99%

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Type‐II van der Waals Heterostructures Based on AsP and Transition Metal Dichalcogenides: Great Promise for Applications in Solar Cell

Zhao

Han

Jia

et al. 2022

Physica Rapid Research Ltrs

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As an effective means to adjust the properties of 2D materials, type‐II van der Waals (vdW) heterostructures have been under extensive research due to their significantly reduced carrier recombination probability and extended carrier lifetime. Herein, stable vdW heterostructures based on arsenic phosphorus (AsP) and transition metal dichalcogenides are designed. The geometry, electronic, and optical properties for type‐II AsP/MX2 heterostructures (M = Mo, W; X = S, Se) by first‐principle calculations are systematically explored and their application in solar cell materials is predicted. AsP/MX2 heterostructures are indirect semiconductors with the quasiparticle bandgap ranging from 1.49 to 2.02 eV. They effectively widen the light absorption of AsP monolayers in visible and ultraviolet regions. It is worth noting that AsP/WSe2 heterostructure can form a built‐in electric field (0.832 eV Å−1) and have a minor exciton binding energy (0.22 eV), suggesting that it is a potential solar cell material. The power conversion efficiency is more than 15%. The results will provide a theoretical basis for sustainable energy applications of AsP‐based vdW heterostructures in the future.

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Section: Stabilities and Electronic Properties Of Type-ii Vdw Heteros...mentioning

confidence: 85%

“…Its E b is slightly larger than GeSe/AsP heterostructure, 0.11 eV. [ 66 ] It means that AsP/WSe 2 AB stacking vdW heterostructure has a small electron–hole recombination probability.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Type‐II van der Waals Heterostructures Based on AsP and Transition Metal Dichalcogenides: Great Promise for Applications in Solar Cell

Zhao

Han

Jia

et al. 2022

Physica Rapid Research Ltrs

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show abstract

“…Although the standard DFT is known to underestimate band gaps which is usually corrected by hybrid functionals [38][39][40][41], Li et al [34] found only a tiny difference (that will not affect the conclusions) between the SBHs calculated using PBE and HSE06. The authors of this study further concluded that PBE-D2 method is able to provide sufficiently reliable results and the HSE06 method is no longer considered in their discussion.…”

Section: Simulation Detailsmentioning

confidence: 99%

Schottky contacts in graphene and few layers Janus MoSSe van der Waals heterostructure

Pasanaje

AlShaikhi

2021

Eur. Phys. J. Plus

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In this study, we made the graphene contact with monolayer MoSSe in two ways as G/SMoSe and G/SeMoS after which the electronic properties, Schottky contact, and barrier height were obtained for both contact sides. An n-type Schottky contact was observed for both structures with reasonable SBH. To further investigate the contact type and barrier height as a function of layer thickness, bilayers of the Janus MoSSe were verti-

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Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Kamble,

Shin,

Park

et al. 2023

Solar RRL

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Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due to its excellent optoelectronic properties, which hold tremendous promise in a wide range of applications, including thin‐film solar cells (TFSCs) and photoelectrochemical (PEC) water splitting. Several attempts have been made to date in theoretical studies, high‐quality GeSe material synthesis, evaluating absorber properties, and developing efficient TFSCs and PEC devices. Using existing device topologies for chalcogenide materials, TFSCs with 5.2% efficiency and a PEC device with 3.17% solar‐to‐hydrogen efficiency have been recently developed. To enable its potential in high performances of TFSCs and PEC devices for future large‐scale applications, further improvement in materials quality, device design, and development is required. In this regard, this review provides a comprehensive overview of current advances made in GeSe material development and applications in TFSCs and PEC devices. First, the fundamental properties of GeSe material, theoretical studies, as well as in‐depth synthesis methods, are outlined. Then, key developments in GeSe‐based TFSCs and PEC devices are discussed with an emphasis on device designs. Finally, the most prominent impediments to a fundamental understanding of materials are highlighted, and perspectives on future research directions for improving material quality and device efficiency are provided.

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The high power conversion efficiency of a two-dimensional GeSe/AsP van der Waals heterostructure for solar energy cells

Abstract: The van der Waals heterostructure is a practical way to promote the conversion efficiency of solar energy. Here, we demonstrate the efficient performance of the GeSe/AsP heterostructure in solar energy...

Cited by 29 publications

References 62 publications

Type‐II van der Waals Heterostructures Based on AsP and Transition Metal Dichalcogenides: Great Promise for Applications in Solar Cell

Type‐II van der Waals Heterostructures Based on AsP and Transition Metal Dichalcogenides: Great Promise for Applications in Solar Cell

Schottky contacts in graphene and few layers Janus MoSSe van der Waals heterostructure

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

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