TheC-VCharacteristics of Metal/Bi_3.54Nd_0.46Ti₃O₁₂/Silicon Structure

Orientation dependence of electrical properties for Bi4−xNdxTi3O12 (x=0.85) thin film deposited on p-type Si(100) substrate

“…7 exhibits the Schottky plots using the estimated values of ln(J L /T 2 )-10 3 /T at V = 0. The barrier heights estimated from the slopes of the fitting lines of the randomly oriented and the predominantly c-axis-oriented BNdT thin films were calculated to be 0.05 and 0.10 eV, respectively, which are comparable with 0.04 eV of barrier height reported for BNdT films [19]. This suggests that the calculated barrier height of the BNdT films is reasonable.…”

“…According to the C-V curves, the N fc values are calculated to be 2.6 Â 10 11 and 2.9 Â 10 11 cm À2 , respectively, which are comparable with 2.9 Â 10 11 cm À2 of fixed charge densities reported for BNd(La)T thin films grown by a solgel method and a metal-organic decomposition method [18,19]. Similar charge densities suggest that N fc calculated here is reasonable and the BNdT film is a good candidate for FeFET operation.…”