The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy

Oylumluoglu, Gorkem; Kavasoğlu, A. Sertap; Kavasoğlu, Neşe

doi:10.1016/j.jallcom.2012.01.154

Cited by 4 publications

(4 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For CdTe, this technique is mostly used to study the often encountered electrical contact problem [8]- [10], the etching procedure effect [11]- [13], and doping effects [14], [15]. Furthermore, this procedure is also widely used in DSSC, perovskite, Cu 2 ZnSnS 4 , and silicon solar cells [16]- [23]. This technique has also been used for CIGS solar cells [24]- [28] for general defects analysis.…”

mentioning

confidence: 99%

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells

Cunha

Rocha

Vinhais

et al. 2019

IEEE J. Photovoltaics

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells

Cunha

Rocha

Vinhais

et al. 2019

IEEE J. Photovoltaics

View full text Add to dashboard Cite

show abstract

“…Although some density of interfacial state produced by 60 Co and Hot‐carrier Ejection in NMOS have been calculated via energy position in the band gap, this does not give enough idea about verification and validation of the methodology suggested in this paper. To further observe the efficiency and accuracy of the method to any kind of solid evidences available using experimental data, the experimental energy‐depend density of interfacial state of p‐Si/CdS heterojunction is illustrated in Figure . Meanwhile, the density of interfacial state of p‐Si/CdS heterojunction is determined by energy given in Figure .…”

Section: Results and Simulationmentioning

confidence: 99%

“…Measured and modeled the depend density of interfacial state of p‐Si/CdS heterojunction along the energy.…”

Section: Results and Simulationmentioning

confidence: 99%

“…The features of hetero‐structures are strongly influenced by interfacial characteristics. The interface‐states density ( D ) of a metal‐insulator‐semiconductor (MIS) structure or metal‐oxide‐semiconductor (MOS) one is an important parameter that changes the behaviors of all devices . There exist interfacial states in hetero‐structures, and there are also many ways to create or decreases the density of interface states .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Prediction of the density of interfacial state produced by radiation in NMOS

Changshi

Feng

2013

Int J Numerical Modelling

View full text Add to dashboard Cite

This paper is aimed at the description of the mathematical relationships between energy position in the band gap and the density of interfacial state in N-type metal-oxide-semiconductor (NMOS) capacitor irradiated by 60 Co. Substantial differences of density of interfacial state caused by physical environment are observed. On the basis of non-linear curve fitting, a typical numerical method is used to quantitatively analyze the energy-dependent density of interfacial state. The simulations agree very well with the observed spectra (density of interfacial state versus the energy position in the band gap). The minimum correlation coefficient between the actual data and calculated one is 0.953. The average relative errors between the measured and modeled quantities do not exceed 6.32% in all considered cases. To my knowledge, it is the first time that the density of interfacial state can be predicted via energy level in the full range of band gap.

show abstract

An analytic model to describe the relationship between conductance and frequency of heterojunction

Changshi¹

2015

J. Semicond.

View full text Add to dashboard Cite

The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequencydependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the (pyronine-B)/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.

show abstract

The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy

Cited by 4 publications

References 33 publications

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells

Prediction of the density of interfacial state produced by radiation in NMOS

An analytic model to describe the relationship between conductance and frequency of heterojunction

Contact Info

Product

Resources

About

The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy

Cited by 4 publications

References 33 publications

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se2Solar Cells

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se2Solar Cells

Prediction of the density of interfacial state produced by radiation in NMOS

An analytic model to describe the relationship between conductance and frequency of heterojunction

Contact Info

Product

Resources

About

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells

Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se₂Solar Cells