2012
DOI: 10.1016/j.microrel.2012.05.013
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The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

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Cited by 15 publications
(4 citation statements)
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“…The narrow device exhibits a higher pre-irradiation threshold voltage, 28.9 V, than the wide one, 25.4 V, which is essentially consistent with the results in bulk technology. [10,11] There, the off-state leakage currents of the narrow devices are lower than those of the wide ones. Mechanical stress is supposed to play an important role in determining this inverse narrow channel effect.…”
mentioning
confidence: 99%
“…The narrow device exhibits a higher pre-irradiation threshold voltage, 28.9 V, than the wide one, 25.4 V, which is essentially consistent with the results in bulk technology. [10,11] There, the off-state leakage currents of the narrow devices are lower than those of the wide ones. Mechanical stress is supposed to play an important role in determining this inverse narrow channel effect.…”
mentioning
confidence: 99%
“…Larger variation means the difference in characteristics between devices is more evident and the performance of the system employing them may be affected by this 'uncertainty' if it is not under control. Issues on radiation induced parameter variation are also reported in other studies, such as total ionizing radiation induced a larger variation of leakage current [13] and some other related reports on the variation of single-event upset [14].…”
Section: Comparison Between Bulk Si Cms and Pdsoi Cmsmentioning
confidence: 70%
“…The increase in variability in as-processed devices is primarily caused by minor variations in the production process, such as random dopant fluctuations [4], oxide thickness variations [3] and hydrogen concentration variations [5]. In recent studies, it has been shown how the random statistical fluctuations in manufacturing processes impact the radiation response of a given technology [6][7][8][9] increasing costs and complexity of the radiation qualification process [10].…”
Section: Introductionmentioning
confidence: 99%