The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

Abstract

In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

“…The obtained results showed that conductance and capacitance values were increased after γ-ray irradiation and, were decreased when the radiation dose was increased from 30 kGy to 60 kGy [53]. It was shown that 60 Co γ-irradiation had a role play in temperature-sensitive I-V characteristics of Gr-based Schottky structure and increased the generation of free carriers [54].…”

“…In the obtained results, it was shown that the interface states contributed to the dielectric properties of the structure. We also studied the γ-ray irradiation effect on electrical properties, conductance, and capacitance features of Gr-based Schottky diode with an insulator layer [53,54]. The obtained results showed that conductance and capacitance values were increased after γ-ray irradiation and, were decreased when the radiation dose was increased from 30 kGy to 60 kGy [53].…”