The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Sokolovskij, Robert; Zhang, Jian; Zheng, Huarong; Li, Wenmao; Jiang, Yang; Yang, Guangren; Yu, Hongyu; Sarro, P.M.; Zhang, Guoqi

doi:10.1109/jsen.2020.2987061

Cited by 17 publications

(14 citation statements)

References 40 publications

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“…Additionally, the sensitivity was improved at higher temperatures ( Figure 4 d). When the device is biased closed to the threshold voltage, the reduction of the current level leads to a higher sensitivity, which is similar to the gate recess approach [ 31 ]. Since the gate bias modulation is a damage-free technique, it exhibited the advantage over the gate recess method to improve the sensor’s performance.…”

Section: Resultsmentioning

confidence: 99%

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Nguyễn

Kim

2021

Micromachines

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We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

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Section: Resultsmentioning

confidence: 99%

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Nguyễn

Kim

2021

Micromachines

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“…The static power consumption is 2.96 mW. The authors of [30] propose the hydrogen gas detection property of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with a recessed gate structure. The power consumption of the sensor is 2.95 mW.…”

Section: Gas Sensorsmentioning

confidence: 99%

“…Feeding ability of the system and both architectures at 22 m from relay antenna compared to minimum required power supply of the gas sensors. The DC powers A1, B1, C1, D1 and E1 correspond to the power supply of sensors given in the references [26][27][28][29][30], respectively.…”

Section: Figure 31mentioning

confidence: 99%

A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

Benkalfate

Ouslimani

Kasbari

et al. 2022

Sensors

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In this paper, a new RF Energy Harvesting (RF-EH) system for Wireless Sensor Network (WSN) feeding is proposed. It is based on two different monitored architectures using switch circuits controlled by the input powers. One architecture is more adapted to high input powers and the other to low input powers. The two different architectures and the system are designed and realized on Teflon glass substrate with a relative permittivity of 2.1 and thickness of 0.67 mm. They are tested separately as a function of the distance from the relay antenna. A new multiband antenna with a size of 40 × 30 mm2 is used for both architectures and the system. The measured antenna gains are 2.7 dB, 2.9 dB, and 2.55 dB for the frequencies of 1.8 GHz, 2.1 GHz, and 2.66 GHz corresponding to the mobile communication networks, respectively. The rectifier consists of two Schottky diodes forming a full-wave rectifier and voltage doubler. The maximum measured RF-to-DC conversion efficiency is 71.5%. The proposed RF-EH system provides a maximum DC output voltage of 5.6 V and 3.15 V for an open and 2 kΩ resistance load, respectively.

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“…The existing sensors in literature though attain very high sensitivities using nanoparticles and patterned gate to increase the sensing area, has poor detection limits [31][32][33][34][35][36][37][38][39]. This limitation arises since the underlying device design and the heart of operation of the sensor (2DEG in case of HEMT) is given little focus compared to the interest laid in improving the sensing area.…”

Section: Comparison With Existing Sensorsmentioning

confidence: 99%

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

2021

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Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improved to develop high precision gas sensors for automotive and space applications. The proposed model aids in systematical study of the sensor performance and prediction of sensitivities. The linear relation of threshold voltage shift at thermal equilibrium is used in predicting the sensor response. Numerical model for the reaction rates and the electrical dipole at the adsorption sites at the surface and metal/semiconductor interface have been developed and the sensor performance is analyzed for various gas concentrations. The validation of the model has been achieved through surface and interfacial charge adsorption-based gate electrode work function, Schottky barrier, 2DEG and threshold voltage deduction using MATLAB and SILVACO ATLAS TCAD. Further the applicability of gd (channel conductance) as gas sensing metric is also presented. With high ID and gd percentile sensitivities of 118.5% and 92 % for 10 ppm hydrogen concentration. The sensor shows capability for detection in sub-ppm levels by exhibiting a response of 0.043% for 0.01ppm (10 ppb) hydrogen concentration. The detection limit of the sensor (1% sensitivity) presented here is 169 ppb and the device current increases by 34.2 μA for 1ppb hydrogen concentration.

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The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Cited by 17 publications

References 40 publications

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

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