2023
DOI: 10.3390/cryst13040628
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The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET

Abstract: In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of the hysteresis effect on device characteristics of various fin-widths and the degradation induced by stress on the ferroelectric FinFET (Fe-FinFET). We clarified the electrical characteristics of the device and conducted related reliability inspections. For the Fe-FinFET, the hysteresis behavior of the Hf0.5Zr0.5O2-based gate stack in the Si-fin body is apparent, especial… Show more

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