The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Watling, J.R.; Yang, Liqiu; Boriçi, M.; Wilkins, R.C.W.; Asenov, A.; Barker, John R.; Roy, S.

doi:10.1016/j.sse.2004.01.015

Cited by 31 publications

(18 citation statements)

References 38 publications

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“…However, in spite of the increasing AFM measured surface roughness with Ge content (strain), the mobility enhancement is maintained in the strained Si devices. High mobility enhancement in strained Si MOSFETs at high vertical fields (in the surface-roughness scattering regime) has led researchers to propose that strained Si MOSFETs have "smoother" surfaces compared with Si control MOSFETs [22,23]. Lower surface roughness amplitudes and longer correlation lengths were required to match simulated high field mobilities with measured high field mobilities in strained Si MOSFETs [22].…”

Section: Resultsmentioning

confidence: 99%

“…High mobility enhancement in strained Si MOSFETs at high vertical fields (in the surface-roughness scattering regime) has led researchers to propose that strained Si MOSFETs have "smoother" surfaces compared with Si control MOSFETs [22,23]. Lower surface roughness amplitudes and longer correlation lengths were required to match simulated high field mobilities with measured high field mobilities in strained Si MOSFETs [22]. Smoother surfaces in strained silicon are assumed because the mobility enhancement mechanism (reduced phonon scattering from ∆ 2 -∆ 4 conduction band splitting) can explain mobility enhancement at medium vertical fields (where phonon scattering is the dominant mobility limiting mechanism) but not at high vertical fields (where surface roughness scattering is the dominant mobility limiting mechanism).…”

Section: Resultsmentioning

confidence: 99%

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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Alatise

Olsen

O'Neill

2010

Solid-State Electronics

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Alatise

Olsen

O'Neill

2010

Solid-State Electronics

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“…4 Control of the biaxial distortion of Si is important because strain induces interface band offsets and lowers the degeneracy of the conduction band minima of Si. 5,6 A biaxially strained thin film of Si grown between relaxed SiGe layers breaks this degeneracy and further forms a Si quantum well (QW) layer applicable to quantum devices but is accompanied by structural effects associated with plastic relaxation.…”

Section: Introductionmentioning

confidence: 99%

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Tilka

Park

Ahn

et al. 2016

Journal of Applied Physics

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The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

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“…Due to a smaller density of states and a stronger degeneracy of Ge and In 0.53 Ga 0.47 As compared with Si, Fermi-Dirac statistics should be considered in the transport model for future CMOS devices. A number of authors have focused on numerical simulations under Fermi-Dirac statistics, using Ensemble Monte Carlo simulation [4], multi-subband Monte Carlo simulation [5,6], and simplified QET model [7].…”

Section: Introductionmentioning

confidence: 99%

A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs

Sho

Odanaka

Hiroki³

2015

JASSE

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Abstract. In this paper, a Fermi-Dirac statistics based quantum energy transport (FDQET) model is developed for numerical simulations of high mobility MOSFETs. The QET model allows simulations of carrier transport including quantum confinement and hot carrier effects. Fermi-Dirac statistics are further considered for the analysis of device characteristics with high degeneracy material such as In 0.53 Ga 0.47 As. Numerical stability and convergence are achieved by developing an iterative solution method used when Fermi-Dirac statistics are modeled. Numerical results for Si, Ge and In 0.53 Ga 0.47 As bulk n-MOSFETs are presented. The FDQET model allows us to evaluate the device characteristics with high degeneracy material such as In 0.53 Ga 0.47 As.

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The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Cited by 31 publications

References 38 publications

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs

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