The Impact of Linewidth and Line Density on the Texture of Electroplated Cu in Damascene-Fabricated Lines

Vanasupa, Linda; Pinck, David; Joo, Young‐Chang; Nogami, Takeshi; Pramanick, S.; Lopatin, S.; Yang, Kai

doi:10.1149/1.1390809

Cited by 21 publications

(14 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This difference is likely due to the sidewall texture present in narrow Cu lines. 12 Upon in situ TEM heating, and in the case of 1.8 m lines, the nucleation of dislocations at Cu grain boundaries and consequent motion away from the grain boundaries during the first thermal cycle were observed ͑Fig. 2͒.…”

mentioning

confidence: 99%

In situ transmission electron microscopy observations of 1.8μm and 180nm Cu interconnects under thermal stresses

Ferreira

2006

Applied Physics Letters

View full text Add to dashboard Cite

In situ heating transmission electron microscopy was used to observe the stress relaxation behavior in 1.8μm and 180nm wide Cu interconnects in real time. 1.8μm lines exhibit dislocation nucleation at the grain boundaries, while void nucleation/growth was observed in the 180nm lines. The difference in the stress relaxation mechanism is due to distinct stress states among the two lines, namely, biaxial for the 1.8μm lines and quasihydrostatic stress for the 180nm lines. Quasihydrostatic stresses in the 180nm lines are likely to lead to an absence of dislocation motion.

show abstract

mentioning

confidence: 99%

In situ transmission electron microscopy observations of 1.8μm and 180nm Cu interconnects under thermal stresses

Ferreira

2006

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Previous investigations into the microstructure and texture of Cu films and lines by EBSD showed a strong dependence of texture and grain size distribution on plating bath chemistry and line height to width ratio (Besser et al 2001, Field et al 2001, Vanasupa et al 1999. Copper lines were manufactured by the damascene technique in SiO 2 using a 30 nm thick physical vapor deposited (PVD) aN barrier layer and a PVD copper seed layer.…”

Section: Resultsmentioning

confidence: 99%

Electron backscatter diffraction characterization of inlaid cu lines for interconnect applications

Field

Muppidi

Sanchez³

2003

Scanning

View full text Add to dashboard Cite

Summary: Automated electron backscatter diffraction (EBSD) techniques have been used to characterize the microstructures of thin films for the past decade or so. The recent change in strategy from an aluminum-based interconnect structure in integrated circuits to one based on copper has necessitated the development of new fabrication procedures. Along with new processes, complete characterization of the microstructures is imperative for improving manufacturability of the Cu interconnect lines and in-service reliability. Electron backscatter diffraction has been adopted as an important characterization tool in this effort. Cu microstructures vary dramatically as a function of processing conditions, including electroplating bath chemistry, sublayer material, stacking sequence of sublayers, annealing conditions, and line widths and depths. Crystallographic textures and grain size and grain boundary character distributions, all of which may influence manufacturability and reliability of interconnect lines, are ideally characterized using EBSD. The present discussion presents some results showing structural dependence upon processing parameters. In addition, the authors identify an in-plane orientation preference in inlaid Cu lines {111} normal to the line surface and <110> aligned with the line direction. This relationship tends to strengthen as the line width decreases.

show abstract

“…12. Several bodies of research [20][21][22][23] have reported that the importance of the sidewall {111} component is increased in the narrow lines and the intensity of the overall texture can be minimized. However, in superconformal filling conditions where the bottom growth is much more dominant than the sidewall growth, such an observation is questionable.…”

Section: Discussionmentioning

confidence: 99%

Textural and microstructural transformation of Cu damascene interconnects after annealing

Cho

Kim

et al. 2005

Journal of Elec Materi

View full text Add to dashboard Cite

Influence of annealing on the textural and microstructural transformation of Cu interconnects having various line widths is investigated. Two types of annealing steps have been considered here: room temperature over 6 months and 200°C for 10 min. The texture was determined by x-ray diffraction (XRD) of various cross-sectional profiles after electropolishing, and the surface, microstructure, and grain boundary character distribution (GBCD) of Cu interconnects were characterized using electron backscattered diffraction (EBSD) techniques. In order to analyze a relationship between the stress distribution and textural evolution in the samples, microstresses were calculated with decreasing line widths at 200°C using finite element modeling (FEM). In this investigation, it was found that the inhomogeneity of stress distribution in Cu interconnects is an important factor, which is necessary for understanding textural transformation after annealing. A new interpretation of textural evolution in damascene interconnects lines after annealing is suggested, based on the state of stress and the growth mechanisms of Cu electrodeposits.

show abstract

The Impact of Linewidth and Line Density on the Texture of Electroplated Cu in Damascene-Fabricated Lines

Cited by 21 publications

References 0 publications

In situ transmission electron microscopy observations of 1.8μm and 180nm Cu interconnects under thermal stresses

In situ transmission electron microscopy observations of 1.8μm and 180nm Cu interconnects under thermal stresses

Electron backscatter diffraction characterization of inlaid cu lines for interconnect applications

Textural and microstructural transformation of Cu damascene interconnects after annealing

Contact Info

Product

Resources

About