Summary: Automated electron backscatter diffraction (EBSD) techniques have been used to characterize the microstructures of thin films for the past decade or so. The recent change in strategy from an aluminum-based interconnect structure in integrated circuits to one based on copper has necessitated the development of new fabrication procedures. Along with new processes, complete characterization of the microstructures is imperative for improving manufacturability of the Cu interconnect lines and in-service reliability. Electron backscatter diffraction has been adopted as an important characterization tool in this effort. Cu microstructures vary dramatically as a function of processing conditions, including electroplating bath chemistry, sublayer material, stacking sequence of sublayers, annealing conditions, and line widths and depths. Crystallographic textures and grain size and grain boundary character distributions, all of which may influence manufacturability and reliability of interconnect lines, are ideally characterized using EBSD. The present discussion presents some results showing structural dependence upon processing parameters. In addition, the authors identify an in-plane orientation preference in inlaid Cu lines {111} normal to the line surface and <110> aligned with the line direction. This relationship tends to strengthen as the line width decreases.
Structure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.
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