Barrier layer, geometry and alloying effects on the microstructure and texture of electroplated copper thin films and damascene lines

Muppidi, T.; Field, David P.; Sanchez, J. E.; Woo, C.

doi:10.1016/j.tsf.2004.04.057

Cited by 32 publications

(12 citation statements)

References 16 publications

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“…The faint ring observed in Fig. 1f 21 where the average grain size decreased after Ag was added to the seed layer. The resultant Cu(Ag 0.3 ,N 0.4 ) and Cu(Ag 1.2 ,N 0.7 ) films indicated that there had been no copper silicide formation at the film interface, even after annealing at 600°C for 1 h or at 400°C for 240 h.…”

Section: Microstructuresmentioning

confidence: 87%

Copper-Silver Alloy for Advanced Barrierless Metallization

Lin

Leau

2009

Journal of Elec Materi

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In this study we observed significantly improved properties, over a pure copper (Cu) film, for a copper-silver alloy film made with a pure copper film co-sputtered with a minute amount of either Ag 0.3 N 0.4 or Ag 1.2 N 0.7 on a barrierless Si substrate. In either case, no noticeable interaction between the film and the Si substrate was found after annealing at 600°C for 1 h. The Cu(Ag 0.3 ,N 0.4 ) film was thermally stable after annealing at 400°C for 240 h. The film's resistivity was $2.2 lX cm after annealing at 600°C, while its leakage current was found to be lower than that of a pure Cu film by three orders of magnitude. The adhesion of the Cu(Ag 1.2 ,N 0.7 ) film to the Si substrate was approximately seven times that of a pure Cu film to a silicon substrate. Hence, a Cu film doped with Ag and N seems to be a better candidate for both barrierless metallization and the making of superior interconnects.

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Section: Microstructuresmentioning

confidence: 87%

Copper-Silver Alloy for Advanced Barrierless Metallization

Lin

Leau

2009

Journal of Elec Materi

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“…Numerous studies have shown copper interconnects to be textured (Muppidi et al 2005;Ganesh et al 2010;Kaouache et al 2008;Rizzolo 2014), i.e. to have preferred orientation.…”

Section: Grain Oreintation Assignmentmentioning

confidence: 99%

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Basavalingappa

Shen

Lloyd

2017

Mech Adv Mater Mod Process

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Background: Copper is the primary metal used in integrated circuit manufacturing of today. Even though copper is face centered cubic it has significant mechanical anisotropy depending on the crystallographic orientations. Copper metal lines in integrated circuits are polycrystalline and typically have lognormal grain size distribution. The polycrystalline microstructure is known to impact the reliability and must be considered in modeling for better understanding of the failure mechanisms. Methods: In this work, we used Voronoi tessellation to model the polycrystalline microstructure with lognormal grainsize distribution for the copper metal lines in test structures. Each of the grains is then assigned an orientation with distinct probabilistic texture and corresponding anisotropic elastic constants based on the assigned orientation. The test structure is then subjected to a thermal stress.

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“…[12][13][14][15][16] In this study the texture formation, according to only the film thickness and heat treatment, is investigated and discussed.…”

Section: Introductionmentioning

confidence: 99%

Effect of film thickness on the evolution of annealing texture in sputtered copper films

Park

Field

Nowell

et al. 2005

Journal of Elec Materi

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Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) films was investigated by electron backscatter diffraction (EBSD). Analysis of films was performed both in situ using a heating stage, and by ex-situ observation of microstructural evolution. It was noted that not only is the Cu film texture and grain size a function of film thickness, but also that the fraction of twin boundaries present in the material is strongly dependent upon film thickness. This is explained by means of a simple model that considers the energy of the system. Surface and interface energies, as well as grain boundary energies for random high angle boundaries and for twin boundaries (both coherent and incoherent planes) are used in the determination. The model was shown to accurately predict the twin boundary size in self-annealed films. This type of analysis also results in a texture map similar to that presented by Thompson, 12 but incorporates the development and effect of twin boundaries, so that additional texture components (in addition to 111 and 100 fibers) are included.

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Barrier layer, geometry and alloying effects on the microstructure and texture of electroplated copper thin films and damascene lines

Cited by 32 publications

References 16 publications

Copper-Silver Alloy for Advanced Barrierless Metallization

Copper-Silver Alloy for Advanced Barrierless Metallization

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Effect of film thickness on the evolution of annealing texture in sputtered copper films

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