ECS Solid State Letters
 2015
DOI: 10.1149/2.0031508ssl
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The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors

Ying‐Hsin Lu
1
,
Ting Chang Chang
2
,
Shinn‐Ying Ho
3
et al.
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