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This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La 2 O 3 dipole-doped N-type MOSCAP. Experimental results show that the dipole-doped N-type MOSCAP has a lower threshold voltage and gate current leakage than do the N-type MOSCAP. After positive bias stress, an abnormal gate current leakage decrease appears in both dipole-doped and normal N-type MOSCAPs under short term stress. Analysis of capacitance and gate current measurements indicate that electron trapping and defect generation cause the change in gate current after positive bias stress. Generally, devices with higher gate leakage have more severe degradation after PBTI. However, in this work, the dipole sample shows a lower initial gate current leakage but higher gate current degradation than those found in the control sample after PBTI. Based on the electrical measurement results and the energy band simulation, a conduction model was proposed to explain the abnormal PBTI of the dipole-doped N-type MOSCAP.

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