The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

Abstract

. (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. Permanent WRAP URL:http://wrap.warwick.ac.uk/69590 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: "© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works." A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP URL' above for details on accessing the published version and note that access may require a subscription. Abstract-SiC Schottky Barrier Diodes (SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot and damping are shown to depend on the ambient temperature and the MOSFET switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-ON and reduces with increasing temperature during turn-OFF. As a result of this, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-OFF. This temperature dependency of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d 2 IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2 kV SiC-SBDs is measured over a wide temperature range (-75°C to 200°C).The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obta...

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

“…It is a general observation that the current commutation rate (dIDS/dt) increases with temperature during the turn-ON transient of SiC power MOSFETs [20,21] however what has not been adequately investigated is the impact of temperature on the gate current plateau and how this, together with the turn-ON dIDS/dt can be used as a TSEP for junction temperature sensing in SiC power MOSFETs. The turn-ON of a MOSFET is described in [26][27][28].…”

“…5 show. Measurements from literature and datasheets show that for SiC MOSFETs, the turn-ON dIDS/dt increases with temperature [21,29,31], while for silicon MOSFETs devices [32], the turn-ON dIDS/dt is either temperature invariant or decreases with temperature. The reason for this is due to dβ/dT, which is very low in SiC MOSFETs but is negative in silicon MOSFETs.…”

“…In [16], harmonic analysis of an IGBT converter output is used as a TSEP whereas in [17,18] the temperature dependency of the gate current in MOSFETs and IGBTs has been used as a TSEP for condition monitoring with promising results demonstrated. In the case of Si MOSFETs, the switching rate during turn ON was evaluated as a TSEP in [19], and the characteristics of SiC MOSFETs [20][21][22] suggest that the dynamic properties of SiC during turn ON can be a suitable TSEP.…”

“…Furthermore, the switching energy in SiC actually reduces as the temperature increases, thereby causing the device to dissipate less power during operation [21]. Hence, using the losses as a TSEP is therefore not straight-forward in SiC MOSFETs.…”

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

“…The actual test rig is shown in [31], [32]. The measurements are performed on a 1.2 kV/30 A SiC Schottky barrier diode with datasheet reference SDP30S120.…”