The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure

Abstract

Articles you may be interested inThe effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012); 10.1063/1.4754318 Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt -ZnO -Pb ( Zr 0.2 Ti 0.8 ) O 3 -Pt heterostructures Appl. Phys. Lett. 96, 012903 (2010); 10.1063/1.3284659 Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation Growth, microstructure, and ferroelectric properties of Pb ( Zr 0.4 Ti 0.6 ) O 3 ∕ Pb Zr O 3 superlattices prepared on Sr Ti O 3 (100) substrates by pulsed laser depositionThe hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO 3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300 K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100 K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5 V at room temperature. V C 2012 American Institute of Physics. [http://dx.

Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions

“…[10][11][12][13][14][15] For this very reason, electrical and polarization boundary conditions (BCs) at the film-electrode interface become crucially important parameters that determine the functionality of these systems almost regardless of film thickness. Significant number of studies have been devoted to clarifying the effect of semiconducting properties of FEs on their hystereses, capacitance-voltage, and current-voltage behavior, 4,16,2,3,10,11,13,[17][18][19][20][21] where the only difference is apparently the consideration of an additional built-in field due to polarization inserted to the equations next to the built-in field due to the Schottky character of the junction. 10,11,13,22 A number of other works adopt thermodynamic approaches coupled with electrostatics and semiconductor equations for a given FE-electrode couple.…”

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

“…As documented in the literature, the C – V hysteresis for a MFS structure is a competition between ferroelectric contribution and contribution from charges trapped on interface states. [ 13,14 ] If ferroelectric contribution dominates, the C – V hysteresis is clockwise for ferroelectric on p‐type semiconductor and counterclockwise for ferroelectric on n‐type semiconductor. If the contribution from interface states dominates, then the orientation is changed, as it happens for HZO on n‐Ge.…”

Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

“…Capacitance-voltage (C-V) measurements, were anticlockwise for all the samples, and didn't exhibit any signature of a depletion layer, which would lead to an additional series capacitance leading to a decrease in the capacitance for one of the biases 14,15 . Below, we show the C-V measurements for the PZT0 and PZT25 samples measured at 10 kHz.…”