The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (111) by RF-MBE

Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

“…Samples (b) and (c) were thermally cleaned at 900 1C for an hour followed by $ 1 ML and $ 2 ML Ga deposited at 450 1C and heated up to 750 1C for redesorption, respectively. Afterwards, b-Si 3 N 4 layer was formed in all samples using nitridation of the substrate at 530 1C for 30 min followed by annealing at 900 1C for 30 min and again nitridation at 700 1C for 30 min [18]. For all three samples, lowtemperature GaN buffer layers of thickness of 20 nm were grown at 500 1C, where the Ga effusion cell temperature was kept at 950 1C and corresponding beam equivalent pressure (BEP) was maintained of 5.6 Â 10 À 7 mbar.…”

Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding

“…In addition, it is used as a wide-band-gap semiconductor (e.g., 4.7 eV) [5,6]. Growth of high-quality silicon nitride is very important due to its wide applications in microelectronics such as etch masks [7], and a buffer layer for III-nitride growth [8]. Recently, the growth of group III-Nitride on Si substrate has been very important for the mass production of high electron mobility transistors (HEMTs) due to the low cost, large surface area, and high thermal conductivity of Si substrates.…”