2014
DOI: 10.1063/1.4883216
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The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

Abstract: Articles you may be interested inA comparative study of spin coated and floating film transfer method coated poly (3-hexylthiophene)/poly (3-hexylthiophene)-nanofibers based field effect transistors J. Appl. Phys. 116, 094306 (2014); 10.1063/1.4894458 High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition Appl. Phys. Lett. 104, 143302 (2014); 10.1063/1.4870991 Improving the performance of organic thin film transistors formed on a vacuum flash-ev… Show more

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Cited by 59 publications
(42 citation statements)
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“…Organic semiconductors have been spin-coated onto substrates to fabricate high-performance organic field-effect transistors (OFETs) that have attracted particular attention as key elements for realizing next-generation flexible printed electronics 7 8 9 10 11 12 . The performances of OFETs prepared by spin-coating are strongly correlated with the morphology and solid-state order of the deposited semiconducting layer 13 14 , and these properties depend significantly on the processing conditions applied during spin-coating, such as the solvent properties 15 16 , the substrate temperature 17 18 19 and surface characteristics 20 21 , the ambient solvent vapor pressure 22 , and the spinning speed 23 24 or time. The careful adjustment of all processing parameters can maximize the performance of the OFETs fabricated by spin-coating, given the inherent limitations of the semiconducting material.…”
mentioning
confidence: 99%
“…Organic semiconductors have been spin-coated onto substrates to fabricate high-performance organic field-effect transistors (OFETs) that have attracted particular attention as key elements for realizing next-generation flexible printed electronics 7 8 9 10 11 12 . The performances of OFETs prepared by spin-coating are strongly correlated with the morphology and solid-state order of the deposited semiconducting layer 13 14 , and these properties depend significantly on the processing conditions applied during spin-coating, such as the solvent properties 15 16 , the substrate temperature 17 18 19 and surface characteristics 20 21 , the ambient solvent vapor pressure 22 , and the spinning speed 23 24 or time. The careful adjustment of all processing parameters can maximize the performance of the OFETs fabricated by spin-coating, given the inherent limitations of the semiconducting material.…”
mentioning
confidence: 99%
“…22 Solution-processed graphene oxide bottom-contacts have been also utilised though exhibiting nonlinear output characteristics. 23 OFETs were fabricated on Si n++ /SiO 2 substrates with a bottom-gate top-contact configuration (Figure 3a). Blends of C8-BTBT with polystyrene in a ratio of 4:1 and dissolved in anhydrous chlorobenzene (2 % wt) were casted by bar-assisted meniscus shearing as previously reported.…”
Section: -Results and Discussionmentioning
confidence: 99%
“…Several morphology control strategies to overcome this issue have been reported, including solvent engineering, which provides large ordered domains originating from interactions between solvent and conjugated polymers; applying shear force to organic semiconductors using various printing methods; and other shear alignment methods including off‐center spin coating, which applies centrifugal force to substrate away from the spin coater axis . However, it is essential to understand the kinetics of drying from a deposited solution in order to obtain optimized polymer film morphology, which is strongly correlated with various processing conditions such as solvent, substrate temperature, and spinning speed . Recent studies have also investigated the role of residual solvents during film formation of polymeric semiconductors using short spinning time and solvent additives, which allow changing the degree of ordering of the polymer molecules and hence changing OFET device electrical characteristics.…”
Section: Introductionmentioning
confidence: 99%