The influence of abrasive particle size in copper chemical mechanical planarization

Wei, Kuo; Wang, Yu Sheng; Liu, Chuan‐Pu; Chen, Kei Wei; Wang, Ying Lang; Cheng, Yi

doi:10.1016/j.surfcoat.2012.04.004

Cited by 26 publications

(14 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As is well-known, the uniformity and shape of the abrasive particles in the polishing slurry play a crucial role in their polishing effect. 25 The structural characteristics of the abrasive particles in the CMP slurry reported in this study are better than those of previously reported materials. 26 The material removal rate (MRR, μm h −1 ) can be calculated by the following equation: 16 where Δ m is the mass loss of copper wafers after polishing (g), ρ is the density of the copper wafers (8.9 g cm −3 ), S is the total contact area between the polishing pad and copper substrates (mm 2 ) and t is the polishing time (h).…”

Section: Resultscontrasting

confidence: 63%

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

et al. 2022

View full text Add to dashboard Cite

show abstract

Section: Resultscontrasting

confidence: 63%

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

et al. 2022

View full text Add to dashboard Cite

show abstract

“…These are 318 ± 29 HV, 322 ± 30 HV, 351 ± 31 HV and 376 ± 33 HV, respectively. The electropolished samples have higher hardness values than samples that are not electropolished because samples that are not electropolished show crack initiation because stress is concentrated [ 38 , 39 , 40 , 41 ].…”

Section: Resultsmentioning

confidence: 99%

The Effect of Oxalic Acid as the Pre-Activator for the Electropolishing of Additive Manufactured Titanium-Based Materials and Its Characterization

et al. 2022

View full text Add to dashboard Cite

The use of additive manufactured (AM) titanium-based materials has increased substantially for medical implants and aerospace components. However, the inferior surface roughness of additive manufactured products affects the outward appearance and reduces performance. This study determines whether activation treatment prior to electropolishing produces a better surface. Oxalic acid (OA) is used as a pre-activator using different experimental conditions and the surface roughness is reduced by electropolishing with an electrolyte of perchloric acid and glacial acetic acid. The SEM surface morphology, mechanical properties, phase transformation and electrochemical properties are measured to determine the effect of different degrees of roughness on the surface. The results show that the surface roughness of AM titanium-based samples decreases from 8.47 µm to 1.09 µm after activation using OA as a pre-treatment for electropolishing. After electropolishing using optimal parameters, the hardness and resistance to corrosion resistance are increased.

show abstract

“…15 Nevertheless, CMP is affected by numerous parameters such as the type of abrasive, pressure on the workpiece as well as polishing pad, 16 and the morphology, size, physical, and chemical properties of abrasive are considered to be one of the most crucial factors affecting the surface quality. 17,18 Cerium oxide (CeO 2 ) as the abrasive is widely used for CMP of fused silica due to its combined with satisfactory surface finish and roughness as well as relatively high material removal rate (MRR). 19,20 Owing to the wide size distribution of commercial CeO 2 , which a proportion of coarse particles in the slurry can lead to surface defect, 21 it is difficult to satisfy the increasing demand for surface quality.…”

Section: Introductionmentioning

confidence: 99%

“…Chemical mechanical polishing (CMP) technology is the only super smooth surface processing technology that can achieve global planarization and nanoscale roughness by far, 11–14 which is applied to aerospace, precision optics and information technology field, and so on 15 . Nevertheless, CMP is affected by numerous parameters such as the type of abrasive, pressure on the workpiece as well as polishing pad, 16 and the morphology, size, physical, and chemical properties of abrasive are considered to be one of the most crucial factors affecting the surface quality 17,18 …”

Section: Introductionmentioning

confidence: 99%

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Zhang

Jia

et al. 2022

J Am Ceram Soc.

View full text Add to dashboard Cite

Surface quality of fused silica, particularly surface defect and surface roughness, is a key factor affecting the performance of high-power laser and short-wave optical instrument, and so on. Herein, the super smooth surface of fused silica with roughness of sub-angstrom level and exceedingly few submicron defects was achieved by using ultrafine nano-CeO 2 with primary particle size less than 4 nm, low secondary particle agglomeration strength, and high Ce 3+ concentration. Furthermore, CeO 2 involve in polishing process in the form of primary particle was certified by experiment. Moreover, the cause for the generation of submicron defects on fused silica surface was investigated for the first time from the perspective of secondary particle agglomeration strength of CeO 2 . The concentration of Ce 3+ in CeO 2 was characterized by the redshift of the band-gap energy, and the analysis of material removal rate (MRR) and contact angle of polished fused silica shows that Ce 3+ enhances MRR through increasing the silanol group on fused silica.

show abstract

The influence of abrasive particle size in copper chemical mechanical planarization

Cited by 26 publications

References 8 publications

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

The Effect of Oxalic Acid as the Pre-Activator for the Electropolishing of Additive Manufactured Titanium-Based Materials and Its Characterization

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Contact Info

Product

Resources

About

The influence of abrasive particle size in copper chemical mechanical planarization

Cited by 26 publications

References 8 publications

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

The Effect of Oxalic Acid as the Pre-Activator for the Electropolishing of Additive Manufactured Titanium-Based Materials and Its Characterization

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO2

Contact Info

Product

Resources

About

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂