2016
DOI: 10.1149/2.0261606jes
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The Influence of Adsorption Kinetics on Copper Superfilling for Dual Damascene

Abstract: The proceeding scaling in microelectronic devices requires smaller and smaller copper wires for energy transfer in integrated devices. Voids in the copper wires lead to a resistance increase and damage of the wiring. Copper wires are fabricated by electrochemical deposition as it enables a bottom-up, void free copper growth, so-called superfilling. The present work focuses on the mechanism of the electrochemical deposition with the goal of understanding and describing the superfilling. Electrochemical measurem… Show more

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Cited by 5 publications
(4 citation statements)
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“…Although in production applications PEG and Cl are commonly used together with the accelerator additive SPS, studying the sole PEG-Cl system in a first step is naturally fundamental to understand the whole SPS-PEG-Cl system, where the interplay between SPS and PEG is crucial. [22][23][24]27,28 Moreover, the achievement of the superfilling of TSVs in a PEG-Cl bath without SPS 15 points to the technical importance of this system and further motivates its study. In the past, extensive modeling efforts were already devoted to the effect of PEG and Cl − .…”
mentioning
confidence: 99%
“…Although in production applications PEG and Cl are commonly used together with the accelerator additive SPS, studying the sole PEG-Cl system in a first step is naturally fundamental to understand the whole SPS-PEG-Cl system, where the interplay between SPS and PEG is crucial. [22][23][24]27,28 Moreover, the achievement of the superfilling of TSVs in a PEG-Cl bath without SPS 15 points to the technical importance of this system and further motivates its study. In the past, extensive modeling efforts were already devoted to the effect of PEG and Cl − .…”
mentioning
confidence: 99%
“…The potential process would require a suitable dielectric etch followed by metal superfill. Superfill of metals is required in order to achieve a uniform bottom-up fill in the interconnect features [6] [7]. Although there were many schemes investigated to deposit copper, they had significant drawbacks depending upon the method chosen.…”
Section: Introductionmentioning
confidence: 99%
“…Extensive research efforts over the past few decades have led to the development and continued improvement and understanding of electrodeposition processes suitable for deposition of dense films of copper in recessed sub-micron features for integrated circuit applications. [1][2][3][4][5][6] Processes that yield locally enhanced deposition at the bottom of recessed features (termed "bottom-up", superconformal filling, or "superfilling") rely on additives that adsorb with differential coverage on the various surfaces of the recessed features causing locally inhibited or enhanced deposition rates of the copper film. [7][8][9] Since the development of the first electrodeposition process for superconformal filling of interconnect features, the Damascene process, models have been developed that successfully predict the characteristics of the systems capable of superfilling.…”
mentioning
confidence: 99%
“…13 A well-characterized system using an acid copper sulfate electrolyte with three or four additives has also been extensively studied and successfully modeled by the Curvature Enhanced Accelerator Coverage (CEAC) model. [2][3][4][5][6][10][11][12] During deposition, superfilling is achieved when a rate-accelerating additive (typically a thiol) competitively displaces a rate-suppressing additive (often a polyether), at advancing concave surfaces. Displacement of the inhibiting additive leads to enhanced deposition rates at concave sur-faces, such as the copper films advancing from the bottom of recessed features.…”
mentioning
confidence: 99%