The influence of aqueous sodium dodecyl sulphate solution in the photoresponsivity of nitrogen doped graphene oxide photodetector

Ahmad, Harith; Thandavan, Tamil Many K.

doi:10.1016/j.optmat.2017.08.038

Cited by 10 publications

(3 citation statements)

References 34 publications

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“…Progress in highly scalable photodetectors based on N-doped graphene is rarely reported because of the limited functionalities of the devices owing to the difficulties in upscaling graphene for wafer-scale device integration, thus impacting their macroscopic behavior. Despite the reported outstanding optoelectronics properties such as wide-band and large-area photodetection, the recent developments in graphene and other two-dimensional material-based heterostructure devices are mostly tied to lab-scale fabrication because of technological issues that limit the scales of the processes. − In view of this, nitrogen-doped reduced graphene oxide (N-rGO), as one of the promising two-dimensional materials with a wide band gap, can be merely integrated onto silicon-based systems on the wafer-scale without compromising complicated graphene growth procedures and transfer processes. In this work, we report in situ plasma treatment of N-rGO with a high-scalable scheme on an 8 in.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

Haniff

Ariffin

Hafiz

et al. 2019

ACS Appl. Mater. Interfaces

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We demonstrated a simple and scalable fabrication route of a nitrogen-doped reduced graphene oxide (N-rGO) photodetector on an 8 in. wafer-scale. The N-rGO was prepared through in situ plasma treatment in an acetylene-ammonia atmosphere to achieve an n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition, and electrical properties of the N-rGO were carefully characterized and used for the device fabrication. The N-rGO devices were fabricated in a simple metal−semiconductor−metal structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W −1 at 1.0 V, which is about 2 orders of magnitude higher compared to a pristine graphene and wide-band photoinduced response from the visible to the near-infrared region with increasing sensitivity in the order of 785, 632.8, and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of the photoinduced response to any position of local laser excitation with respect to the electrodes. The excellent features of waferscale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

Haniff

Ariffin

Hafiz

et al. 2019

ACS Appl. Mater. Interfaces

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“…Furthermore, to quantitatively measure the photoelectric performance of our ONFGTs, their photoresponsivity ( R ) and external quantum efficiency (EQE) were calculated as a function of incident light wavelength using the following equations [ 36,45 ]

R = \frac{I_{p h}}{P W L}

EQE = \frac{R h c}{λ e}

where P is the light power incident on the surface of the device, W and L are the width and length of the irradiated area, respectively, h is the Plank's constant, λ is the incident light wavelength, c is the speed of light in a vacuum, and e is the electronic charge.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, to quantitatively measure the photoelectric performance of our ONFGTs, their photoresponsivity (R) and external quantum efficiency (EQE) were calculated as a function of incident light wavelength using the following equations [36,45]…”

Section: Resultsmentioning

confidence: 99%

Implementation of Photosynaptic and Electrical Memory Functions in Organic Nano‐Floating‐Gate Transistors via a Perovskite‐Nanocrystal‐Based Nanocomposite Tunneling Layer

et al. 2023

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An organic nano‐floating‐gate transistor (ONFGT) with both photosynaptic and electrical memory functions is developed using a perovskite (CsPbBr3) NC‐insulating polymer (polystyrene; PS) nanocomposite and CsPbBr3 NCs as the tunneling and floating gate layers, respectively. The introduction of the CsPbBr3 NCs–PS nanocomposite layer improves the photoresponsivity of the ONFGT under ultraviolet–visible irradiation, resulting in an increase in both the photocurrent and the light‐to‐dark current ratio by 10−8 A and 104 orders of magnitude, respectively. It also exhibits high responsivity (0.804 A W−1) and external quantum efficiency (249.3%) under 400 nm irradiation. Furthermore, the photosynaptic characteristics of the ONFGT under visible‐light irradiation are investigated. To mimic biological nervous systems, the photocurrent of the device is dynamically modulated by varying the light intensity and duration. Notably, an increase in synaptic weight is observed under repeated photonic stimulations, as shown by changes in synaptic weight with each light pulse. Also, the ONFGT exhibits excellent nonvolatile memory characteristics in the dark, displaying a hysteresis window value of 2.9 V for a gate double sweep under ±5.0 V. Consequently, the perovskite NCs–insulating polymer nanocomposite tunneling layer is crucial for enabling photoresponsivity and memory characteristics in nano‐floating‐gate transistors, making them suitable for multifunctional electronic devices.

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Characterization of graphene oxide/silicon dioxide/p-type silicon heterojunction photodetector towards infrared 974 nm illumination

Ahmad

Thandavan

2017

Opt Quant Electron

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The influence of aqueous sodium dodecyl sulphate solution in the photoresponsivity of nitrogen doped graphene oxide photodetector

Cited by 10 publications

References 34 publications

Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

Implementation of Photosynaptic and Electrical Memory Functions in Organic Nano‐Floating‐Gate Transistors via a Perovskite‐Nanocrystal‐Based Nanocomposite Tunneling Layer

Characterization of graphene oxide/silicon dioxide/p-type silicon heterojunction photodetector towards infrared 974 nm illumination

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