The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

Abstract

In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.

Characterization of Structure, Morphology, Optical and Electrical Properties of AlN–Al–V Multilayer Thin Films Fabricated by Reactive DC Magnetron Sputtering

“…The first rough layer, due to the high absorption of aluminum, was a semi-infinite medium in the model. Features of this approach are described in [37]. As a result of restoring the layer parameters according to the proposed model, the following characteristics were found for the AlN films:…”

“…Previously, we have already carried out the deposition of AlN-Al-V (also recalled V/Al/AlN) composite films on glass-ceramic (sitall) and Si(100) substrates, with the key objectives of research being the state and methods of modifying the AlN surface [35][36][37][38]. In particular, the possibility of forming AlN-Al-V films with optimal surface roughness was previously revealed.…”

Analytical and Technological Research Center “High Technologies & Nanostructured Materials”: History, Formation and Achieved Results

“…Тем не менее различия в резистивных состояниях достаточно для хранения информации в элементах памяти [30]. Сотрудниками Лаборатории ФДНС были исследованы структуры, составы и свойства материалов, включая пьезоэлектрические характеристики [32] поликристаллических текстурированных пленок AlN (ПЭМ данной структуры показан на рисунке 5b), полученных методом магнетронного осаждения в высоком вакууме при активном сотрудничестве с Омским научным центром СО РАН. В 2023-2024 годах планируется объединить наработки в области систем хранения и систем передачи информации для разработки комплексных решений при создании современных отечественных систем оперирования большими данными (Big Data).…”