“…The time constant of T-B, τ T-E , and the time constant of τ T-E are written as [11]: (1) (2) where τ T-E is a time constant [13], [11] are the electron effective mass in the SiO 2 and Si 3 N 4 , respectively, here m 0 is the free electron mass. E T is the trap energy level referenced to the conduction band edge in the Si 3 N 4 (eV), q is the absolute electron charge, E B =1.05 eV [15] is the energy barrier height of electron tunneling (eV), h is Planck's constant, d TO is the thickness of the SiO 2 (nm), T is the absolute temperature (K), A is the temperature independent constant, k B is Boltzmann's constant, t is the retention time (s) and is the tunneling distance in the Si 3 N 4 measured from the SiO 2 /Si 3 N 4 interface as follows (nm):…”