2010
DOI: 10.1007/s00339-010-5694-0
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The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures

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Cited by 7 publications
(2 citation statements)
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“…The time constant of T-B, τ T-E , and the time constant of τ T-E are written as [11]: (1) (2) where τ T-E is a time constant [13], [11] are the electron effective mass in the SiO 2 and Si 3 N 4 , respectively, here m 0 is the free electron mass. E T is the trap energy level referenced to the conduction band edge in the Si 3 N 4 (eV), q is the absolute electron charge, E B =1.05 eV [15] is the energy barrier height of electron tunneling (eV), h is Planck's constant, d TO is the thickness of the SiO 2 (nm), T is the absolute temperature (K), A is the temperature independent constant, k B is Boltzmann's constant, t is the retention time (s) and is the tunneling distance in the Si 3 N 4 measured from the SiO 2 /Si 3 N 4 interface as follows (nm):…”
Section: Resultsmentioning
confidence: 99%
“…The time constant of T-B, τ T-E , and the time constant of τ T-E are written as [11]: (1) (2) where τ T-E is a time constant [13], [11] are the electron effective mass in the SiO 2 and Si 3 N 4 , respectively, here m 0 is the free electron mass. E T is the trap energy level referenced to the conduction band edge in the Si 3 N 4 (eV), q is the absolute electron charge, E B =1.05 eV [15] is the energy barrier height of electron tunneling (eV), h is Planck's constant, d TO is the thickness of the SiO 2 (nm), T is the absolute temperature (K), A is the temperature independent constant, k B is Boltzmann's constant, t is the retention time (s) and is the tunneling distance in the Si 3 N 4 measured from the SiO 2 /Si 3 N 4 interface as follows (nm):…”
Section: Resultsmentioning
confidence: 99%
“…So far, there are several works engaging in profiling the distribution of trapped charge, such as transient currents analysis, 4) the monitoring of charge retention, [5][6][7][8] and trap spectroscopy by charge injection and sensing (TSCIS). 9) Although a variety of approaches have been proposed, they have some deficiencies in detail.…”
Section: Introductionmentioning
confidence: 99%