Characterization of the charge trapping properties in p-channel silicon–oxide–nitride–oxide–silicon memory devices including SiO₂/Si₃N₄ interfacial transition layer

Abstract

The role of SiO 2 /Si 3 N 4 interfacial transition (IFT) layer in the oxide-nitride-oxide (ONO) tri-layer is quantitatively analyzed for the first time by simulating the temperature and stress-accelerated retention characteristics of p-channel silicon-oxide-nitride-oxide-silicon (SONOS) devices. The ONO tri-layer is modeled as an alloy-dielectric by changing the atomic concentration of silicon, oxygen and nitrogen. It is revealed that simulated results including the IFT layer are more consistent with the experimental data than those neglecting the IFT layer. In addition, the results show that the trapped charge density in IFT layer is two times larger than in the bulk Si 3 N 4 film, due to the oxygen atoms penetrated from SiO 2 cause the extrinsic defects in the IFT layer. The energy levels of the trapped charge are continuously distributed, and the peak value is >1.6 eV below the conduction band of the ONO tri-layer with a full width at half maximum of 0.45 eV.

Characterization and Modeling of a Highly Reliable ONO Antifuse for High-Performance FPGA and PROM

“…The trapped positive charges resulting from hole generation by impact ionization in the oxide lead to an increased local field and reduce barrier height of the cathode under high electric field. The P-F transport model suggests that electron trapping causes an increase in the electric field at the anode and eventually leads to breaking of Si-O bands [10][11][12][13][14][15][16][17][18]. approximately behave in accordance with linear fitting, and that of adjective coefficients are more than 0.99, and which indeed indicates the exactness of the model.…”

“…It is understood that the decrease of ∆E c exponentially enhances the tunneling probability of HEs, while it exponentially suppresses the tunneling probability of HHs. The positive charge(HHs) produced by injection is observed such that the cathode field for F-N current injection is enhanced and the anode field is decreased, depending on the location of these charge [10][11][12][13][14][15][16][17][18]. The trapped positive charges resulting from hole generation by impact ionization in the oxide lead to an increased local field and reduce barrier height of the cathode under high electric field.…”

Technique for Profiling the Cycling-Induced Oxide Trapped Charge in NAND Flash Memories

“…This suggests that, at high T cyc , the endurance model should not only take into consideration the creation of damage but also the recovery from damage. The time-dependent damage recovery during t wait can be described by a rate equation given by [52,53] f = exp(−t wait /τ) (6)…”