1983
DOI: 10.1016/0039-6028(83)90237-6
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The influence of counter-ion adsorption on the ψ0/pH characteristics of insulator surfaces

Abstract: The site-binding theory of Yates, Levine, and Healy is extended to include the possibility that counter-ion binding of anions and cations occurs at different distances from the insulator surface. A method for straightforward computation of the $,,/ea/pH characteristics is given. This theory is applied to the study of electrolyte/insulator/silicon structures, which makes it possible to measure the $e/pH characteristics. Measurements are presented for structures where the insulator is y-AlaO, deposited by chemic… Show more

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Cited by 128 publications
(80 citation statements)
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“…Additionally, table 1 provides literature for a more detailed study, sorted by the metals (Au, Ag) studied. [107][108][109][110][111]. At low pH, the surface can be charged positively by the adsorption of protons (MOH 2 þ ), whereas it will be negatively charged at high pH owing to depletion of protons (M-O 2 ).…”
Section: Ion Effectsmentioning
confidence: 99%
“…Additionally, table 1 provides literature for a more detailed study, sorted by the metals (Au, Ag) studied. [107][108][109][110][111]. At low pH, the surface can be charged positively by the adsorption of protons (MOH 2 þ ), whereas it will be negatively charged at high pH owing to depletion of protons (M-O 2 ).…”
Section: Ion Effectsmentioning
confidence: 99%
“…This has been discussed very actively in the literature, and different models have been used to explain the mechanism of surface complexation of alkali ions. [12,13] The potential at a surface with a constant charge density is controlled by the salt concentration of the electrolyte solution. Hence, any change in salt concentration will alter the surface potential.…”
Section: Silicon-on-insulator Based Thin-film Resistor For Chemical Amentioning
confidence: 99%
“…for measuring the pH of a solution). [18][19][20][21][22][23][24][25] An electrode based on the ISFET concepts consists of a metal attached to a semiconductor (e.g. Si) whose surface is covered by the phase of interest, an insulator (e.g.…”
Section: Ion Sensitive Field-effect Transistor (Isfet)mentioning
confidence: 99%
“…The ISFET electrode is a sensitive electronic device for determining the concentration of H + ions and also for the study of equilibrium processes at the metal oxide/aqueous electrolyte interfaces. ISFETs have been successfully used for SiO2, [21] TiO2, [22] Al2O3 [20] surfaces. The sensitivity of the ISFET electrode (the dependency of surface potential) to pH (compared to the Nernstian slope) is given in Table 1.…”
Section: Ion Sensitive Field-effect Transistor (Isfet)mentioning
confidence: 99%
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