The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

Kuech, T. F.; Veuhoff, E.; Kuan, T. S.; Deline, V. R.; Potemski, R. M.

doi:10.1016/0022-0248(86)90310-6

Cited by 158 publications

(27 citation statements)

References 30 publications

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“…4 In the latter case, it has been postulated that the oxygen incorporation results from the in situ O 2 -TMAl gas phase reaction forming volatile dimethyl aluminum methoxide ͓͑CH 3 ͒ 2 AlOCH 3 ͑DMALO͔͒. 5 This alkoxide then acts as a gas phase oxygen source.…”

Section: Introductionmentioning

confidence: 99%

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Huang

Bray

Kuech

1996

Journal of Applied Physics

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Intentional oxygen incorporation, using diethyl aluminum ethoxide ͓(C 2 H 5 ͒ 2 AlOC 2 H 5 ͔ during metalorganic vapor phase epitaxy GaAs was found to compensate C and Zn shallow acceptors as well as Si and Se shallow donors, due to the oxygen-related multiple deep levels within the GaAs band gap. Deep level transient spectroscopy ͑DLTS͒ was used to characterize the energy levels associated with these oxygen deep centers. The total measured trap concentration from DLTS can account for the observed compensation in n-type GaAs:O. The total trap concentration in p-type GaAs:O, however, was found to be lower than the observed compensation by a factor of ϳ100. These oxygen deep centers exhibit multiple electronic states which have been associated with the local number of Al nearest neighbors and the microscopic structure of the defect. The concentration and nature of these deep levels were not influenced by the chemical identity of the shallow dopants.

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Section: Introductionmentioning

confidence: 99%

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Huang

Bray

Kuech

1996

Journal of Applied Physics

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“…2 Energy(eV) Fig. 2 The photoluminescence spectra taken from AI,Gal ~1 As samples indicate a sharp reduction in carbon content with the choice of growth precursor [48], [53]. The use of (CH3)3N:AIH3 with (C2H5)3Ga yields a low carbon content Al,Gal-,As film.…”

Section: B New Growth Chemistriesmentioning

confidence: 99%

“…Additionally, the Ga-ClHs bond is weaker than the Ga-CH3 bond, resulting in a lower temperature, highly facile decomposition reaction. While the carbon incorporation is reduced, the growth uniformity often is degraded when using (C2H5)3Ga or (CzH5)3A1 because of the lower decomposition temperature and the subsequent premature decomposition of the compound prior to the growth front [48]. This uniformity problem is strongly affected by the reactor design.…”

Section: B New Growth Chemistriesmentioning

confidence: 99%

Recent advances in metal-organic vapor phase epitaxy

Kuech

1992

Proc. IEEE

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“…Trialkyl aluminium compounds are widely used precursors for MO&D of aluminium and compound semiconductors [2,3] and for LCVD of A1 41. These aluminium alkyls have a disadvantage which concerns the incorporation of car b on in the growing layers.…”

Section: Introductionmentioning

confidence: 99%

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA

1993

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Abstract-Maskless patterning of aluminium has been achieved by using visible light from a copper bromide vapor laser for pyrolytic decomposition of trimethylaluminium (TMA) and trimethylamine alane (TMAA). A silicon monocrystalline wafer was used as a substrate. The deposition was carried out at different process parameters (partial pressure of the precursors, laser power and scanning speed). The analysis of the resultant stripes included scanning electron microscopy, Auger electron spectroscopy, Talystep and electrical resistance measurements. The crystalline structure of the layers showed well-defined grains for both precursors. The Auger electron spectra indicated pure aluminium layers with small quantities of oxygen and carbon for stripes deposited from TMAA while those obtained from TMA were more contaminated. The difference in the layers composition for the used precursors resulted in their resistivity values. The low resistivities of aluminium stripes deposited from TMAA (up to 4.0 pC2.cm) makes it promising precursor for metalization with aluminium and especially for chemical vapor deposition enhanced with pulsed visible laser.

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The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

Cited by 158 publications

References 30 publications

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Recent advances in metal-organic vapor phase epitaxy

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA

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