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Several mechanisms for deposition of polysilicon layers by thermal decomposition of silane, in which the transfer of silicon to the surface of growth is accomplished by silane. sililene or disilane, are discussed. It is shown that under defined prerequisites, application of the Langmuir-Hinshelwood model for the acting surfaces in the three cases leads to a kinetic relationship for the growth rate as a function of Silane concentration. The temperature dependences of t h e Constants in t h e relationship for the case of direct deposition from silane are determined. The set of equations obtained can be used for modelling and optimization of various reactors for growth of polysilicon layers.

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Maskless patterning of aluminum has been achieved by using visible light from a copper bromide vapor laser for pyrolytic decomposition of trimethylamine alane (TMAA) on silicon monocrystalline wafer. The analysis of the resultant stripes included scanning electron microscopy, Auger electron spectroscopy, Talystep, and electrical resistance measurements. The crystalline structure of the layers showed well-defined grains. The Auger electron spectra indicated pure aluminum layers with small quantities of oxygen and carbon. The low resistivities of aluminum stripes deposited from TMAA (up to 4.0 μΩ cm) make it a promising precursor for metallization with aluminum and especially for chemical vapor deposition enhanced with a pulsed visible laser.