Composition, structure and properties of silicon nitride films grown from dichlorosilane and ammonia at low pressure

Zambov, L.; Peev, G.; Shanov, V.; Drumeva, S.

doi:10.1016/0042-207x(92)90267-z

Cited by 13 publications

(6 citation statements)

References 13 publications

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“…8a). They exhibit a refractive index (1.76±1.80) that is higher than that of SiO 2 (1.5) but lower than that for LPCVD Si 3 N 4 (around 2.0), [48] and do not etch in hydrofluoric acid solution ( Table 2). Their hardness is comparable to values reported for other polymer-like CN x coatings.…”

Section: Deposition Processesmentioning

confidence: 96%

Low-Pressure CVD of Carbon Nitride Using Triazine-Containing Precursors

Ivanov

Zambov

Georgiev

et al. 1999

Chem. Vap. Deposition

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Carbon nitride (C x N y ) layers with N/C ratios of 0.76±1.26 have been grown under low pressure from two organic chemical systems, namely 2,4-dichloro-6-bis(trimethylsilyl)imido-1,3,5-triazine [C 3 N 3 Cl 2 N(SiMe 3 ) 2 ] and tetramethylguanidine (C 5 H 13 N 3 ) + 2,4,6-trichloro-1,3,5-triazine (C 3 Cl 3 N 3 ). The films synthesized are transparent, well-adhered on silicon, homogeneous in morphology, and uniform in thickness. In addition, a technology has been developed for the deposition of carbon nitride powders with a N/C ratio of 1.3 as starting materials for further thermal treatment attempts in order to synthesize crystalline C 3 N 4 . At deposition temperatures between 400 and 800 C and high supersaturation of reagents in the reactor, the powders obtained exhibit nuclei of crystalline phases.

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Section: Deposition Processesmentioning

confidence: 96%

Low-Pressure CVD of Carbon Nitride Using Triazine-Containing Precursors

Ivanov

Zambov

Georgiev

et al. 1999

Chem. Vap. Deposition

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“…Chlorosilanes have been widely used in chemical vapor deposition (CVD) processing for the growth of silicon, silicon nitride and silicon dioxide films (1)(2)(3). Recently, dichlorosilane (SiH 2 Cl 2 ) has been suggested as a precursor for the atomic layer epitaxy (ALE) of silicon (4)(5)(6).…”

Section: Introductionmentioning

confidence: 99%

Comparison of Trichlorosilane and Trichlorogermane Decomposition on Silicon Surfaces Using FTIR Spectroscopy

1992

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“…The background interference fringes were fitted and subtracted. Typical Wave number (cm 1 ) peaking around 500 cm-1 , attributed to deformation oscillations of Si-N-Si and N-Si-N groups [5,6,8], is also observed. For detecting low concentrations of hydrogen the ERD technique has better sensitivity than the FTIR measurements, which detected no absorption due to stretching vibrations of Si-H or N-H bonds.…”

Section: Composition Measurementsmentioning

confidence: 81%

Characterization of a Silicon Nitride Mask Membrane Process

et al. 1993

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A silicon nitride membrane growth process has been characterized. The films were grown by LPCVD on 100 mm diameter silicon substrates using ammonia and dichlorosilane as reactant gases. The films were grown using a range of gas ratios at three different temperatures. The film composition was determined by elastic recoil detection. The silicon-nitrogen absorption bands were characterized by FTIR spectroscopy. The photon transmission of the films was measured in the visible region from 350 -850 nm, and in the x-ray region for photon energies from 1000 to 3000 eV. The film stresses were determined using the wafer bow technique. An increase in the silicon content of the films was observed for increased dichlorosilane gas flow and for increasing growth temperatures. The increased silicon content of the films is correlated to a decrease in the tensile stress and a decrease in the optical transmission of the films.

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Composition, structure and properties of silicon nitride films grown from dichlorosilane and ammonia at low pressure

Cited by 13 publications

References 13 publications

Low-Pressure CVD of Carbon Nitride Using Triazine-Containing Precursors

Low-Pressure CVD of Carbon Nitride Using Triazine-Containing Precursors

Comparison of Trichlorosilane and Trichlorogermane Decomposition on Silicon Surfaces Using FTIR Spectroscopy

Characterization of a Silicon Nitride Mask Membrane Process

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