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Articles you may be interested inOn resolving hot carrier induced degradation mechanisms in silicononsapphire metaloxidesemiconductor fieldeffect transistors Carrier mobility degradation in metaloxidesemiconductor fieldeffect transistors due to oxide charge Effect of oxide field on hotcarrierinduced degradation of metaloxidesemiconductor fieldeffect transistors Appl. Phys. Lett. 50, 1188Lett. 50, (1987; 10.1063/1.97906 Study of high electrical field induced degradation of channel response in metaloxidesemiconductor field effect transistors using an ac conductance technique

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From an image formation point of view, the design of x-ray masks has been optimized for realistic exposure systems using synchrotron radiation. The analysis has then been carried forward to study the effect of environmental factors such as vibrations. We conclude that the ideal x-ray mask is based on thin absorbers (0.3–0.4 μm) for Au and W, that the existence of a sidewall slope improves the exposure latitude, and that vibrations (amplitude less than 1/2 critical dimension) do not represent a source of concern. All in all, the x-ray lithography mask emerges with more relaxed specifications and with a simpler manufacturing process.