2015
DOI: 10.1016/j.spmi.2015.07.026
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The influence of growth temperature on structural and optical properties of sputtered ZnO QDs embedded in SiO 2 matrix

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Cited by 18 publications
(4 citation statements)
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“…These methods are described in our recent study. 30 For the ZnO-SiO 2 interface, the Zn atoms are bound with two O atoms. However, the O-atoms of down sites are not able to bind with Zn atoms and instead defect sites can be created in the boundary between the SiO 2 and ZnO.…”
Section: Resultsmentioning
confidence: 99%
“…These methods are described in our recent study. 30 For the ZnO-SiO 2 interface, the Zn atoms are bound with two O atoms. However, the O-atoms of down sites are not able to bind with Zn atoms and instead defect sites can be created in the boundary between the SiO 2 and ZnO.…”
Section: Resultsmentioning
confidence: 99%
“…The XRD patterns in Figure 3 illustrate the different configurations of ZnO deposited on ITO/glass substrate by the electroless deposition method. The XRD signals are matched with JCPDS number of 36-1451 associated to the hexagonal structure of the wurtzite ZnO [33].…”
Section: Device Morphology and Structurementioning
confidence: 97%
“…The photoluminescence spectrum of the ZnO/graphene thin films is set out in detail in Figure 4b. It was observed that a weak violet emission takes place near 414 nm due to ZnO interstices [21,22] whereas the strong blue emission was found around 463 nm due to O vacancies [23,24]. The weak peak of green emission was observed at 553 nm possibly caused by the transition of electrons from the lower part of the conduction band to the anti-O-Zn site level defect [25].…”
Section: Introductionmentioning
confidence: 99%