The Influence of High-Temperature Sputtering on the N-Doped LaB₆ Thin Film Formation Utilizing RF Sputtering

N2 gas flow rate dependence on the high-k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications

“…It indicates that the N concentration of the N-doped LaB 6 metal layer is similar to the N-doped LaB 6 target. 5) In the case of the LaB x N y insulating layer, we assumed that the additional N atoms replace the B atoms, and the composition of the LaB x N y insulating layer is changed such as LaB 6−x N x by increasing the N 2 gas flow rate. It makes the N concentration closed to the B concentration in the LaB x N y insulating layer, and the crystallinity of the LaB x N y insulating layer was changed when the N 2 gas flow rate was increased from 7 to 9 sccm.…”

“…4) Moreover, the effect of high-temperature sputtering for low work function N-doped LaB 6 thin film formation was reported, and the electron injection to pentacene channel layer was observed using N-doped LaB 6 thin film for organic field-effect transistor applications. 5,6) Recently, Cometto et al reported the Ar/N 2 plasma sputtering using the LaB 6 target. They obtained the in-plain h-BN insulating layer utilizing high power impulse magnetron sputtering.…”