································································································································································································································Purpose: The present study was conducted to investigate whether near work with smartphone could induce the change of accommodative function. Methods: Total 63 subjects(26 male and 37 female) in their 20s were firstly examined their visual functions related to accommodation and uncorrected spherical equivalent power as the control. After that, the subjects were asked to read a book for 30 min and sequentially watch a movie on smartphone for the same time after 30 min-break under the indoor light or as it was in the reverse order to avoid time-ordered effect. Their accommodative functions, 1) accommodative amplitude, 2) accommodative facility, 3) relative positive/negative accommodation, and 4) accommodative lag and their uncorrected spherical equivalent power were examined again following each task and compared with the control values. Results: The monocular accommodative amplitude was significantly decreased after smartphone watching compared with it after reading. The monocular and binocular accommodative facilities were tended to reduce after smartphone watching and book reading but were not significantly different. Neither significant change in positive relative accommodation was determined after smartphone watching nor book reading. Negative relative accommodation after smartphone watching was almost unchanged unlike reading a book. The accommodative lag after smartphone work was significantly higher than after book reading. Conclusions: The near work with a smartphone for 30 min induced the change of some accommodative functions, which was significantly greater than when reading under the same working environment.Key words: Accommodative amplitude, Accommodative facility, Accommodative lag, Near work, Relative accommodation, Smartphone ································································································································································································································ INTRODUCTIONIn recent years, the use of small electronic devices such as tablet computers, PDAs, and smartphones has increased worldwide as easier and faster execution of various tasks such as information retrieval by internet access and schedule management is possible without any restrictions by time or place. An estimated 32.7% of the world's population are now internet users, ranging from 78.4% of the population of North America to 13.5% of that of Africa, which is a 4% increase from 2010.[1,2] The rapid expansion of internet usage has been facilitated by the increased penetration rates of mobile phones, including smartphones. SUBJECTS AND METHODS . [5,6] Based on data from a previous study [7] and the recommendation from the Korea Ministry of Employment and Labor, [17] the working angle for reading a book or viewing a smartphone wa...

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In this paper, the N2 gas flow rate dependence on the high-k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications was investigated. The N2 gas flow rate during the sputtering for the LaB x N y insulating layer was increased from 3 to 9 sccm with the Ar of 10 sccm for N-doped LaB6 (Metal: M)/LaB x N y (Insulator: I)/p-Si(100). Then, the N-doped LaB6/LaB x N y /N-doped LaB6/LaB x N y /p-Si(100) MIMIS diode was fabricated with LaB x N y tunnel layer and block layer formed by Ar/N2 gas flow ratio of 10/7 sccm. The equivalent oxide thickness (EOT) was decreased from 7 to 5.5 nm by increasing the N2 gas flow rate from 3 to 7 sccm. On the other hand, the LaB x N y insulating layer formed by N2 gas flow rate of 9 sccm showed EOT of 8.2 nm with crystallization. Furthermore, the memory window of 0.4 V was obtained for the MIMIS floating-gate structure utilizing the N-doped LaB6/LaB x N y stacked layer.

In this research, the thermal stability of pentacene-based organic FETs (OFETs) was investigated utilizing an amorphous rubrene (α-rubrene) passivation layer. Pentacene channel layers with a thickness of 10 nm were deposited at RT and at 100 °C. The influence of the α-rubrene passivation layer, which was in situ deposited on the pentacene at RT, was examined. The stability of the electrical characteristics and the crystallinity were compared with those after heating to 100 °C in air. For the pentacene deposited without an α-rubrene passivation layer, device performance was remarkably degraded after the heating process. On the other hand, the device characteristics of pentacene-based OFETs with an α-rubrene passivation layer were found to be stable after heating. Furthermore, the α-rubrene passivation layer stabilized the crystallinity of the pentacene layers during the heating process.

In this study, a depletion load pMOS inverter, which is called an enhancement/depletion (E/D) inverter, with a single organic semiconductor was demonstrated utilizing threshold voltage controlled pentacene-based organic field-effect transistor (OFET) realized by a nitrogen-doped (N-doped) LaB 6 interfacial layer (IL). It was found that a N-doped LaB 6 IL introduced in drive OFET realized the inverter characteristic with logic swing of 4.3 V at an operation voltage of −5 V. In addition, a common-gate electrode structure for drive and load OFETs was demonstrated, which would contribute to further scaling and high integration of organic devices.