The influence of high temperatures on radiation damage of GaInP₂/GaAs/Ge triple junction cells

Abstract

We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GalnP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

“…The results clarify that each parameter of the AlInGaP solar cell monotonically decreases as a function of electron fluence. The fitting curves of radiation degradation for solar cell were calculated using the following semi-empirical equation, [22][23][24] f = -…”