The influence of interfaces and intra-band transitions on the band gap of CdS/HgS and GaN/X (X=InN, In 0.33 Ga 0.67 N) core/shell/shell quantum dot quantum well – A theoretical study

Paramasivam, Ganesan; Senthilkumar, L.

doi:10.1016/j.physe.2015.07.002

Cited by 10 publications

(3 citation statements)

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“…The application of high luminescent bare and Mn-doped CdS nanoparticles is widely in optical devices such as optical limiting devices, display devices, optical switching and computing, phase conjugators and also optical correlators [17] [18] [19]. The influence of interfaces and intra-band transitions on the band gap Journal of Materials Science and Chemical Engineering of CdS/HgS and GaN/X core-shell quantum dots were investigated in [20]. The core-shell model along with the distribution of radical wave functions was used for those quantum dots.…”

Section: Background Of the Previous Workmentioning

confidence: 99%

“…The core-shell model along with the distribution of radical wave functions was used for those quantum dots. A theoretical model to calculate the 1 s -1 s transition energy of an exciton in spherically layered quantum dots was presented in [20].…”

Section: Background Of the Previous Workmentioning

confidence: 99%

“…The main drawback in [20] is that the different environmental conditions were not taken into account in the presented model and the calculated functions. The defects related emission and nanosecond optical power limiting in CuS quantum dots was recently investigated in [21].…”

Section: Background Of the Previous Workmentioning

confidence: 99%

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A Novel Thermochemical Method for Fabrication and Theoretical Explanation of High Luminescent Mn-Doped CdS Nanoparticles

Darvishi¹,

Nikfarjam²

2018

MSCE

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In this paper, fabrication and characterization of bare and doped CdS nanoparticles as well as investigating the luminescence properties of these particles as an important II-VI semiconductor are presented. A novel Thermochemical method was used for synthesis of these quantum dots. Thiols were used as the capping agent to prevent further growth during fabrication process. The application of TGA as a capping agent instead of TG was studied as a novel idea in this paper and was used practically in the synthesis of semiconductor nanoparticles. Using this process resulted in particles with sizes between 3 -7 nm. Several samples were synthesized and characterized under various Mn ions doping ratio from 1:10 to 1:180, different temperatures from 40˚C to 96˚C and different pH values from 6 to 10. Synthesis of CdS nanoparticles with high Mn ions concentration resulted in luminescence decrement, while luminescence of nanoparticles was increased by decreasing Mn/Cd doping ratio until Mn:Cd = 1:180. The best fabrication temperature was obtained at 96˚C and the highest luminescence was observed at the pH value of 9. A theoretical explanation for the behavior of fabricated high luminescent quantum dots is presented based on the principles of quantum mechanics. Among semiconductor nano-materials, CdS nanoparticles have attracted considerable attention due to their unique properties, which do not present in their bulk materials [2]. These unique properties introduce them as the important and useful materials for various applications such as solar cells, photodetectors, light-emitting diodes, photoelectrolysis and biological labels [3] [4] [5] [6].Nanoparticles have been grown in a variety of ways, namely precipitation in the solid phase [7] [8], using porous materials as templates [9], growth in nano-sized micelles and precipitation in the liquid phase [10] [11].

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Section: Background Of the Previous Workmentioning

confidence: 99%

Section: Background Of the Previous Workmentioning

confidence: 99%