The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Zhou, Zhiwen; Li, Cheng; Lai, Hongkai; Chen, Songyan; Yu, Jinzhong

doi:10.1016/j.jcrysgro.2008.01.016

Cited by 70 publications

(37 citation statements)

References 26 publications

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“…In the case of Ge, substantial improvements in film quality can be obtained by ramping up the growth temperatures and by applying high-temperature post-growth thermal annealings. [8][9][10][11][12] Unfortunately, these solutions are of limited value for the Ge 1Ày Sn y system. Increases in growth temperature lead to lower Sn incorporation, and the temperature range for post-growth annealing is reduced by the possibility of Sn segregation.…”

Section: Introductionmentioning

confidence: 99%

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne

Gallagher

Jiang

et al. 2014

Journal of Applied Physics

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Novel hydride chemistries are employed to deposit light-emitting Ge1-ySny alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge2H6 and deuterated stannane SnD4. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge3H8, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge4H10 as the Ge source. The photoluminescence intensity from Ge1−ySny/Ge films is expected to increase relative to Ge1−ySny/Si due to the less defected interface with the virtual substrate. However, while Ge1−ySny/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge1−ySny/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge1−ySny/Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge1−ySny/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si1−xGex/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

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Section: Introductionmentioning

confidence: 99%

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne

Gallagher

Jiang

et al. 2014

Journal of Applied Physics

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“…Since the steady state concentration of free Ge sites is much higher than that of free Si sites during deposition of SiGe by RPCVD, equilibrium is achieved by transferring the H adatoms from Si to Ge. As the energy barrier for H 2 desorption from the Ge surface is lower than that for H 2 desorption from the Si surface, the growth rate enhancement with increasing GeH 4 flow can be explained by the lowering of energy barriers for hydrogen desorption [ [17][18][19][20]. According to the literature [13,21] Compared with the reported result [21], our revised relationship implies that a higher Ge content could be obtained if SiGe films were deposited with the same parameters.…”

Section: Dependence Of Sige Growth Rate and Ge Content On Geh 4 Flowmentioning

confidence: 77%

Fabrication of high quality strained SiGe on Si substrate by RPCVD

et al. 2012

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“…If we have an intermediate, partly relaxed layer [18][19][20] or a low-temperature seed layer with a large number of point defects [21][22][23], which was grown on the substrate prior to growing the main film, then such a layer will act as a source of threading dislocations, which will then penetrate into the next film layer as well. As soon as the film, as it grows on the preliminarily grown sublayer, reaches the thickness h c (601), favorable conditions for induced nucleation of complementary 601 MDs arise in the system; this then will lead to the formation of edge MDs at the interface between the film and the sublayer.…”

Section: Critical Film Thickness For Nucleation Of 901 Mdsmentioning

confidence: 99%

“…In recent years the low-temperature/high-temperature strategy has been widely used for growing GeSi films with a high fraction of Ge up to pure Ge [19][20][21][22][23][24].…”

Section: Critical Film Thickness For Nucleation Of 901 Mdsmentioning

confidence: 99%

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Bolkhovityanov

Deryabin

Гутаковский

et al. 2012

Journal of Crystal Growth

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The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Cited by 70 publications

References 26 publications

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Fabrication of high quality strained SiGe on Si substrate by RPCVD

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

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