The influence of Mg doping on the dielectric and tunable properties of (Ba0.6Sr0.4)0.925K0.075TiO3 thin films fabricated by sol–gel method

Sun, Xiaohua; Guo, Shishang; Wu, Guobin; Li, Meiya; Zhao, Xingzhong

doi:10.1016/j.jcrysgro.2005.12.111

Cited by 14 publications

(6 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Usually, the worse crystallization is, the less is dielectric constant of PST. The similar phenomena are also observed in other reports [13]. In addition, we don't find the dielectric enhancement in multilayered thin films.…”

Section: Resultssupporting

confidence: 90%

Dielectric Tunability of Mn Doped Pb0.3Sr0.7TiO3 Multilayered Thin Films Prepared by Sol-Gel Method

Sun

Zhou

Luo

et al. 2011

AMR

View full text Add to dashboard Cite

Pb0.3Sr0.7TiO3 (PST) and 4.5 mol% Mn doped Pb0.3Sr0.7TiO3 (PSTMn) thin films as well as PST/PSTMn/PST/PSTMn/PST (ML-a) and PSTMn/PST/PSTMn/PST/PSTMn (ML-b) multilayered thin films have been fabricated on Pt/Ti/SiO2/Si substrate with sol–gel method. The structure and surface morphology of PST, PSTMn, ML-a and ML-b thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the surface microstructure of multilayered thin films is influenced by deposition sequence and the dielectric constant and tunability of two multilayered thin films lie between that of PST and PSTMn thin films. However, two multilayered thin films have higher the figure of merit (FOM) for lower dielectric loss. The FOM of PST and PSTMn single-component films as well as ML-a and Ml-b multilayered films are 14.2, 14.6, 16.3 and 20.2, respectively. Our results showed that multilayer structure can improve the comprehensive dielectric tunable performance of PST film.

show abstract

Section: Resultssupporting

confidence: 90%

Dielectric Tunability of Mn Doped Pb0.3Sr0.7TiO3 Multilayered Thin Films Prepared by Sol-Gel Method

Sun

Zhou

Luo

et al. 2011

AMR

View full text Add to dashboard Cite

show abstract

“…The microstructure, such as grain size and surface roughness, is one of the key parameters achieving a sharp, low loss interface between the thin film and top electrode [15]. To understand the morphology characteristics including average grain size, shape, distribution of these interfaces in the pure BST and BST/ST/BST films, the SEM study was undertaken.…”

Section: Surface Morphologiesmentioning

confidence: 99%

Structures and dielectric properties of multilayer BST/ST/BST and ST/BST/ST sandwich structures

Wang

Liao

Feng

et al. 2016

Integrated Ferroelectrics

View full text Add to dashboard Cite

Multilayer thin films with sandwich structures of BST/ST/BST and ST/BST/ST were designed and prepared by sol-gel method on Pt/Ti/SiO 2 /Si substrates, and their structures and dielectric properties have been studied. Pure BST and ST films were also studied for comparison. X-ray diffraction reveals that all films grow along (110) orientation and show polycrystalline cubic perovskite structures. SEM shows that the BST/ST/BST film exhibits smaller grain size and better uniformity than the pure BST film. BST/ST/BST and ST/BST/ST films almost keep significantly high tunable capabilities of 40-50% at low applied voltage of ±10 V like the pure BST film, but show lower dielectric losses, resulting in higher figure of merit (FOM). Related mechanisms on such dielectric properties are analyzed by resistor-capacitor (RC) equivalent circuit models. Such sandwich structure design is a novel route for BST films to fulfill the tunable microwave application.

show abstract

“…Barium strontium titanate, represented as Ba x Sr 1−x TiO 3 (BST), has emerged as a noteworthy candidate for application in tunable electronically controllable microwave devices such as phase shifters, capacitors, oscillators, filters, delay lines and parametric amplifiers [ 6 ]. Despite the significant attention and potential applications, several challenges persist in the utilization of BST thin films, particularly in high-frequency scenarios [ 25 ]. In this connection, it is worth noting that one of the main challenges is the concurrent reduction of dielectric loss and augmentation of dielectric tunability.…”

Section: Introductionmentioning

confidence: 99%

“…To decrease the electrical losses (and dielectric permittivity) of ferroelectric barium strontium titanate, efforts include adding minor amounts of acceptor dopant ions (such as Ni 2+ , Fe 2+ , Fe 3+ , Mn 2+ , Mn 3+ , Co 2+ , Co 3+ , Cr 3+ , Bi 3+ , etc., [ 6 ]). Other endeavors involve creating composites encompassing a ferroelectric substance and the so-called linear dielectric—recognized for its minimal dielectric losses and low permittivity—such as MgO [ 27 , 28 ], Al 2 O 3 [ 29 ] and SiO 2 [ 25 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Czekaj,

Lisińska-Czekaj

2024

Materials

View full text Add to dashboard Cite

In the present paper, composite thin films of barium strontium titanate (BaxSr1−xTiO3) with an acceptor modifier (magnesium oxide—MgO) were deposited on metal substrates (stainless steel type) using the sol–gel method. The composite thin films feature BaxSr1−xTiO3 ferroelectric solid solution as the matrix and MgO linear dielectric as the reinforcement, with MgO concentrations ranging from 1 to 5 mol%. Following thermal treatment at 650 °C, the films were analyzed for their impedance response. Experimental impedance spectra were modeled using the Kohlrausch–Williams–Watts function, revealing stretching parameters (β) in the range of approximately 0.78 to 0.89 and 0.56 to 0.90 for impedance and electric modulus formalisms, respectively. Notably, films modified with 3 mol% MgO exhibited the least stretched relaxation function. Employing the electric equivalent circuit method for data analysis, the “circle fit” analysis demonstrated an increase in capacitance from 2.97 × 10−12 F to 5.78 × 10−10 F with the incorporation of 3 mol% MgO into BST-based thin films. Further analysis based on Voigt, Maxwell, and ladder circuits revealed trends in resistance and capacitance components with varying MgO contents, suggesting non-Debye-type relaxation phenomena across all tested samples.

show abstract

The influence of Mg doping on the dielectric and tunable properties of (Ba0.6Sr0.4)0.925K0.075TiO3 thin films fabricated by sol–gel method

Cited by 14 publications

References 26 publications

Dielectric Tunability of Mn Doped Pb<sub>0.3</sub>Sr<sub>0.7</sub>TiO<sub>3</sub> Multilayered Thin Films Prepared by Sol-Gel Method

Dielectric Tunability of Mn Doped Pb<sub>0.3</sub>Sr<sub>0.7</sub>TiO<sub>3</sub> Multilayered Thin Films Prepared by Sol-Gel Method

Structures and dielectric properties of multilayer BST/ST/BST and ST/BST/ST sandwich structures

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Contact Info

Product

Resources

About