The influence of microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system

Impact of The Structure on The Thermal Burnout Effect Induced by Microwave Pulses of PIN Limiter Diodes

“…In the front-end of a radar system, Positive-intrinsic-negative (PIN) limiter is one of the most important modules to protect the back sensitive devices from leakage power itself and adjacent high-power injection [1][2][3] . However, with the development of the pulse power technology, the widespread use of radar and the emergence of high-power microwave (HPM) weapons, the electromagnetic environment faced by radar systems is becoming more and more complicated.…”

“…However, with the development of the pulse power technology, the widespread use of radar and the emergence of high-power microwave (HPM) weapons, the electromagnetic environment faced by radar systems is becoming more and more complicated. External microwave pulses can couple into the electronic systems through the antenna and further damage the PIN limiter [3][4][5] .…”

A Thermal Failure Model for MOSFETs Under Repetitive Electromagnetic Pulses

“…These models solve the thermal diffusion partial differential equations (PDEs) while the heat source inside a semiconductor device is supposed as an ideal infinite plane [18], a sphere immersed in an infinite medium [19], a long cylinder [20], or a cubic [21]. Though useful works have been done on the thermal failure of the bipolar junction transistor [22]- [24], the high electron mobility transistor [25] and the PIN diode [26] [27], efficient model that can accurately analyze the thermal failure process of the MOSFET is still lacking. The intricacy of the geometrical structures of MOSFETs is one reason.…”

Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses

“…Owing to the development of pulse power technology, widespread use of radar and wireless communication systems, and emergence of high-power microwave (HPM) weapons, the electromagnetic environments in which various electronic information systems operate are becoming increasingly complicated. Furthermore, external interfering microwave pulses can couple into the internal electronic systems through antennae and further damage the sensitive modules [1][2][3] . Thus, to protect sensitive components from damage due to external high-power microwave pulses, positive-intrinsic-negative (PIN) diodes are widely used as limiters in radio frequency (RF) receiver systems and communication front-ends [3][4][5] .…”

“…Furthermore, external interfering microwave pulses can couple into the internal electronic systems through antennae and further damage the sensitive modules [1][2][3] . Thus, to protect sensitive components from damage due to external high-power microwave pulses, positive-intrinsic-negative (PIN) diodes are widely used as limiters in radio frequency (RF) receiver systems and communication front-ends [3][4][5] .…”