The influence of silicon on the crystallographic phases of the niobium‐gallium system studied by x‐ray diffraction methods

Abstract

The influence of silicon on the crystallographic phases of the binary niobium‐gallium system is studied by X‐ray diffraction methods. The samples were prepared by rapid quenching. Silicon substituted gallium in all phases of the binary system. It exists a complete pseudobinary solid solution Nb5Ga3‐Nb5Si3. The maximum degree of substitution in the A 15 phase Nb3Ga1–xSix is x = 0.5. The presence of two A 15 phases with different cell parameters indicates the existence of a miscibility gap. Contrary to the expections the supercondusting transition temperatures decreases with an increasing degree of substitution.