The influence of sodium on the properties of CuInS2 thin films and solar cells

Watanabe, Takayuki; Nakazawa, Hikaru; Matsui, Masahiro; Ohbo, Hiroki; Nakada, Tokio

doi:10.1016/s0927-0248(97)00084-6

Cited by 30 publications

(11 citation statements)

References 2 publications

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“…With sufficient Na available, the process will stop once Cu/In = 1 in the remaining CuIn(Se,S) 2 phase. This is supported by a study on the preparation of CuInS 2 by sulfurization finding that the amount of NaInS 2 formed increased with a decrease in the Cu/In ratio of the precursors [11]. For the case of Cu/In > 1, the supply of Na to the surface may be restricted by the presence of Cu 2 Se in the grain boundaries.…”

Section: Discussionmentioning

confidence: 68%

Post-Deposition Sulfur Incorporation into CuInSe₂ Thin Films

et al. 2001

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The effect of initial film composition and substrate in the sulfurization of CuInSe 2 was investigated. CuInSe 2 films deposited on either soda-lime glass (SL) or Corning 7059 ® borosilicate glass (7059) substrates were reacted in flowing H 2 S for times from 1 to 8 hours. Films with Cu-rich composition, Cu/In > 1, reacted for 1 hour had nearly all the Se replaced by S. For Cu-poor films the incorporation of S was significantly reduced. In addition, in Cu-poor films on SL glass CuInS 2 and NaInS 2 were found at the film surface. These phases were not detected in films on 7059 substrates or in Cu-rich films. A phenomenological model is proposed to explain the formation of segregated surface phases in Cu-poor films on SL substrates.

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Section: Discussionmentioning

confidence: 68%

Post-Deposition Sulfur Incorporation into CuInSe₂ Thin Films

et al. 2001

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“…1,7 Precursor films of Cu-In-S were deposited by reactive sputtering in H 2 S gas on a polycrystalline Mo layer fabricated on a soda lime glass substrate. 1,7 Precursor films of Cu-In-S were deposited by reactive sputtering in H 2 S gas on a polycrystalline Mo layer fabricated on a soda lime glass substrate.…”

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confidence: 99%

Changes in the electronic structure of CuInS2 thin films by Na incorporation

Fukuzaki

Kohiki

Yoshikawa

et al. 1998

Applied Physics Letters

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Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure For Na-free and Cu-deficient CuInS 2 thin films with chalcopyrite structure, electron spectra of core levels and valence band were similar to each other in spite of a difference in Cu deficiency. Incorporation of Na with the CuInS 2 films caused peak shifts by Ϫ0.5 eV for the core levels without changes in both linewidth and shape. The electron density of states, deeper by 1-5 eV than that from Cu d -S p hybridization centered at around 2.5 eV, increased by the Na incorporation, and increments in the electron density of states were larger for the films with larger the Cu deficiency. The Na incorporation yielded a surface layer expressed as (Na,Cu͒InS 2 on the Cu deficient CuInS 2 films.

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“…The Table 1 lists the grain size values for the CuInS 2 films deposited from spray solutions with different [Na]/[Cu] molar ratios. A contrary behavior has been observed Na-doped CuInS 2 films deposited by reactive sputtering [6], where the crystallite size was found to enhance with the Na content in the film. On the other hand, additional diffractions with respect to CuInS 2 are also observed.…”

Section: Structure and Morphologymentioning

confidence: 81%

“…Na-doped CuInS 2 thin films have been prepared by various methods, including reactive sputtering [6,7], coevaporation [8], and DC magnetron sputtering [9]. But, to our knowledge, the sodium incorporation in spray pyrolyzed thin films has not been investigated.…”

Section: Introductionmentioning

confidence: 99%