The influence of structural properties on conductivity and luminescence of MBE grown InN

Zincblende and wurtzite phases in InN epilayers and their respective band transitions

“…A large deviation of the c lattice constant was observed earlier in InN epilayers grown on MOCVD GaN buffers [6]. The corresponding strain in the epilayer was mainly attributed to a uni-axial stress as it occurs when defects are incorporated site specifically along (0 0 0 1) crystallographic planes.…”

“…A typical InN epilayer thickness is 800-1000 nm, and the deposition was done under In-rich flux conditions. Further details of the epilayer growth are described elsewhere [6]. The epilayers' oxygen concentration is high, about 10 20 /cm 3 .…”

RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

“…Lattice spacing of InN (0 0 0 2) is estimated to be 5.687 Å from the Bragg angle. This value is somewhat smaller than those previously reported [1,[5][6][7][8][9][10][11]. This discrepancy can be partly explained by in-plane tensile strain due to the misfit strain between 3C-SiC (1 1 0) and InN (1 1 0 0).…”

Effect of oxygen supply on MOVPE InN

“…that the oxygen concentration of all epilayers does not alone explain the n-type conductivity of the respective films [7]. Wu et al also reported the relation between the electron concentration and the oxygen concentration [10] (oxygen concentration determined by secondary ion mass spectrometry).…”

“…Oxygen existed as donor and caused a larger absorption edge due to a BursteinMoss shift for the films grown at higher temperature [6]. Specht reported that the oxygen concentration of all epilayers does not alone explain the n-type conductivity of the respective films [7]. Until now it is not clear whether oxygen acts as a donor in InN films because there is no study of adding oxygen into the reactive atmosphere.…”