2015
DOI: 10.1016/j.tsf.2015.11.010
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The influence of substrate bias voltages on structure, mechanical properties and anti-corrosion performance of Cr doped diamond-like carbon films deposited by steered cathodic arc evaporation

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Cited by 15 publications
(3 citation statements)
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“…Although using a substrate bias voltage in the range of 100 V has no significant effect on the ionization volume due to the high degree of ionization of the cathode in the CAE process, applying a bias voltage can facilitate the entry of more positive ions into the plasma sheath. The presence of more positive ions in the sheath results in the bombardment of the growing surface film with higher kinetic energy, leading to more re‐sputtering from the growing film 31 …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Although using a substrate bias voltage in the range of 100 V has no significant effect on the ionization volume due to the high degree of ionization of the cathode in the CAE process, applying a bias voltage can facilitate the entry of more positive ions into the plasma sheath. The presence of more positive ions in the sheath results in the bombardment of the growing surface film with higher kinetic energy, leading to more re‐sputtering from the growing film 31 …”
Section: Resultsmentioning
confidence: 99%
“…The presence of more positive ions in the sheath results in the bombardment of the growing surface film with higher kinetic energy, leading to more re-sputtering from the growing film. 31 The application of bias voltage has been utilized by many researchers to improve the nucleation rate and deposition of a denser film. [32][33][34] The main effect of increasing the negative bias voltage is that the deposition growth rate decreases due to the re-sputtering mechanism, which occurs as a result of energetic ion bombardment.…”
Section: Microstructure Investigationmentioning
confidence: 99%
“…Several dopants, both non-metallic [14][15][16] and metallic [17][18][19][20][21][22], have been previously investigated to overcome such drawbacks. Silicon has been reported to have an effect on the residual stresses of the films [23] and reduce the hardness up to a certain silicon content threshold in films without hydrogenated precursors [23,24].…”
Section: Introductionmentioning
confidence: 99%