2020 Device Research Conference (DRC) 2020
DOI: 10.1109/drc50226.2020.9135182
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The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications

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Cited by 2 publications
(7 citation statements)
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“…Vertical GaN n-channel trench MISFETs are particularly suited for realizing the required steep current slopes due to their low output capacitance and gate charge figure of merits, COSS × Ron and Qg × Ron [1] [3]. Additionally, this device technology allows aggressive device scaling and enables a high current density per unit area [19]. V ds = 5 V W g = 32.0 mm A = 105 mm 2 840 Hexagon cells Cell's pitch is 6 µm Substrate Ammono "A" HVPE "A" HVPE "B"…”
Section: Introductionmentioning
confidence: 99%
“…Vertical GaN n-channel trench MISFETs are particularly suited for realizing the required steep current slopes due to their low output capacitance and gate charge figure of merits, COSS × Ron and Qg × Ron [1] [3]. Additionally, this device technology allows aggressive device scaling and enables a high current density per unit area [19]. V ds = 5 V W g = 32.0 mm A = 105 mm 2 840 Hexagon cells Cell's pitch is 6 µm Substrate Ammono "A" HVPE "A" HVPE "B"…”
Section: Introductionmentioning
confidence: 99%
“…The epitaxial layers are grown by metalorganic vapour phase epitaxy on 2‐inch ammonothermal n ‐GaN substrate [5 ]. The measured Ga‐face substrate resistivity is 2.2 × 10 −3 Ω·cm, the defect density, in terms of EPD is <5 × 10 4 cm −2 and the FWHM (002) of the X‐ray rocking curve is ∼20 arcsec.…”
Section: Epitaxial Growth and Device Manufacturingmentioning
confidence: 99%
“…For electrical properties evaluation, three device types with different gate widths were prepared; 10.2, 20.4 and 40.7 mm gate width ‘finger’ type devices with a gate density of ∼113 mm/mm 2 have been selected. The devices are designed such that the gate channel trench is oriented along the GaN lattice a ‐plane [5 ]. The vertical GaN MISFET chip used for laser driving contained six individual transistors connected in parallel along with the laser mounting scheme.…”
Section: Epitaxial Growth and Device Manufacturingmentioning
confidence: 99%
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