2011
DOI: 10.1149/1.3567674
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The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects

Abstract: The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for voltage breakdown and electromigration were revealed depending primarily on the pre-clean treatment before cap-layer deposition rather than the deposition process itself.On one hand an "aggressive" pre-clean treatment yields improved Cu/SiN-interface properties with h… Show more

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