“…In order to achieve a better adherence of TiN in the substrate [18,19], and based on some preliminary tests, an The deposition of TiN was carried out by means of reactive plasma, using a Leybold-Heraeus equipment and dc planar magnetron sputtering, under different conditions of applied current, Ar/N 2 flow ratio (J Ar /J N 2 ) and bias voltage, as shown in Table 1. The total pressure inside the chamber remained fixed at 0.27 Pa.…”