The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

Kesan, V. P.; Neikirk, Dean P.; Blakey, P.A.; Streetman, B. G.; Linton, T.

doi:10.1109/16.2472

Cited by 52 publications

(9 citation statements)

References 36 publications

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“…2(a), and its structure resembles the quantum well injection transit time (QWITT) diode proposed by Kesan et al [12] as illustrated in Fig. 2(b).…”

Section: Principle Of Operation Of the Rtd-eammentioning

confidence: 85%

“…The analysis of the electric field switching is based on the QWITT model [12][13] which explicitly takes account of the electric field across the depleted spacer layer. In the RTD-EAM it is the band-edge shift in the depleted spacer layer, via the Franz-Keldysh effect, which gives rise to the observed optical modulation; the optical waveguide configuration is employed to confine light in the depleted spacer layer.…”

Section: Discussionmentioning

confidence: 99%

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Electric field switching in a resonant tunneling diode electroabsorption modulator

Figueiredo

Ironside

Stanley

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00

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Abstract-The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 µm active length device. The advantage of the RTD-EAM, over the conventional reversed biased pn junction EAM, is that the RTD-EAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.

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“…2(a), and its structure resembles the quantum well injection transit time (QWITT) diode proposed by Kesan et al [12] as illustrated in Fig. 2(b).…”

Section: Principle Of Operation Of the Rtd-eammentioning

confidence: 85%

Section: Discussionmentioning

confidence: 99%

Electric field switching in a resonant tunneling diode electroabsorption modulator

Figueiredo

Ironside

Stanley

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00

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“…It has recently been predicted theoretically, Kesan et.al. [12] that in this mode the power available should be of the order of milli watts at several hundred GHz. We plan to investigate this possibility using the diodes mentioned above.…”

Section: Discussionmentioning

confidence: 99%

A Millimeter Wave Quantum Well Diode Oscillator

Grönqvist

Rydberg

Hjelmgren

et al. 1988

1988 18th European Microwave Conference

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Experimental results concerning both the DC characteristics and the performance of Quantum Well (QW) diodes as oscillators are given. Two diodes have been manufactured and used in the work where the main difference between them is the doping profile outside the double barrier structure. I-V curves are presented to demonstrate the importance of these design parameters.Also presented are state of the art results for QW oscillators: 84 LW at 77 K and 60 jW at room temperature for a 90 GHz oscillator and 1 ,uW at 176 GHz also at room temperature.INTRODUCTION.

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“…The first experiments with Quantum Well (QW) diode oscillators were made by Sollner 1983 at microwave fiequencies. Recent results are encouraging (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21). The QW-diode can also be used in multipliers (52,53), and should have a possible application in negative resistance mixers with a potential of having conversion gain.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 96%

“…Assuming that the transit time effects can be neglected (15), it is possible to give an approximate formula for the maximum frequency of oscillation, viz. where A is the diode area.…”

Section: Quantum Well Oscillatorsmentioning

confidence: 99%

New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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In this paper we will address some new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the back to back Banier xi-n+ (bbBNN) varactor diode for multipliers, the single barier varactor (SBV) diode for multipliers, and new achievements conceming the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. A quasioptical design approach with many devices distributed over a surface several wavelengths in dimensions can be used to distibute large power to hundreds of low power devices. This technique is referred to as quasioptical array or grid technique. A few selected recent achievements are presented, demonstrating principles concerning arrays for oscillators, amplifiers, multipliers, phase shifters and mixers. MIRQQ.UCTIQMillimeter wave techniques is becoming more important as new millimeter wave technology emerge and stimulate development of new systems for new applications. In this paper we will briefly discus some "old" devices, but essentially focus on new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the bbBNN varactor diode for multipliers, the single barrier varctor (SBV) diode for multipliers, and new achievements concerning the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. High power handling for a single device means that it has to take high voltages and currents leading to break down phenomena and excess heating. Both problems worsen at higher frequencies since the dimensions of essentially any device have to shrink with increasing frequency in order to keep the impedance reasonable and the parasitics of the device low (2,24).An elegant way to improve the power handling is to let many devices be distributed over a surface several wavelengths in dimensions such that quasi-optical techniques can be used to couple the power to the devices (28,35). This technique is referred to as quasioptical array or grid technique. In fact almost any solid state device can be integrated in an array and thereby improve the power handling capacity. Below a few selected recent achievements are presented, demonstrating principles conceming arrays for oscillators, multipliers, phase shifters and mixers. OSCILAIQORaFor applications using millimeter and submillimeter waves, there is a strong demand for solid state high efficiency sources with low and medium output power. It is to day possible to

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The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

Cited by 52 publications

References 36 publications

Electric field switching in a resonant tunneling diode electroabsorption modulator

Electric field switching in a resonant tunneling diode electroabsorption modulator

A Millimeter Wave Quantum Well Diode Oscillator

New Solid State Devices and Circuits for Millimeter Wave Applications

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