The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

Liu, Jiagao; Gu, Shulin; Zhu, Shunming; Tang, Kun; Liu, Xiaoyong; Chen, H. T.; Zheng, Yi

doi:10.1016/j.jcrysgro.2010.06.016

Cited by 12 publications

(7 citation statements)

References 28 publications

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“…Generally, low reactor pressure should benefit high quality ZnO growth by depressing the gas phase pre-reaction between precursors. However, for ZnO growth, the case may be different, as Zinc species, DMZn or DEZn, is found to dissociate at an enhanced rate in the presence of oxygen atoms or related species [19,20]. Increased reactor pressure will cause a long residence time of the reaction precursors and then result in enhanced dissociation of Zinc species, which is benefit to ZnO growth.…”

Section: Effect Of Reactor Pressurementioning

confidence: 99%

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Zhu

et al. 2012

Journal of Crystal Growth

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Section: Effect Of Reactor Pressurementioning

confidence: 99%

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Zhu

et al. 2012

Journal of Crystal Growth

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“…Our results suggest that oxygen deficiency may enhance graphitic cluster formation during growth, similar to previous reports. 20 The role of carbon in ZnO grown under different conditions is controversial. 21,22 Fluorine is considered to be a shallow donor.…”

Section: Discussionmentioning

confidence: 99%

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

Kvit

Yankovich

Avrutin

et al. 2012

Journal of Applied Physics

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We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth conditions leads to changes in the GZO polarity and different extended defects. For GZO layers on sapphire, the primary extended defects are voids, inversion domain boundaries, and low-angle grain boundaries. Ga doping of ZnO grown under metal-rich conditions causes a switch from pure oxygen polarity to mixed oxygen and zinc polarity in small domains. Electron energy loss spectroscopy and energy dispersive spectroscopy spectrum imaging show that Ga is homogeneous, but other residual impurities tend to accumulate at the GZO surface and at extended defects. GZO grown on GaN on c-plane sapphire has Zn polarity and no voids. There are misfit dislocations at the interfaces between GZO and an undoped ZnO buffer layer and at the buffer/GaN interface. Low-angle grain boundaries are the only threading microstructural defects. The potential effects of different extended defects and impurity distributions on free carrier scattering are discussed. V C 2012 American Institute of Physics. [http://dx

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“…Experimentally, it was reported that C sp2 clusters, which are graphite-like along grain boundaries [220,221], were found in undoped [217,222] and N-doped ZnO [216,221,222]. This indicated that defect complexes of CH x , NH x , and NC x were likely to be present [193], with C concentration significantly increasing in N-doped samples [193,223,224].…”

Section: Carbon Co-doping Effectsmentioning

confidence: 96%

“…Recently, the effects of unintentionally doped C in ZnO by OMVPE growth have attracted significant attention [215][216][217][218][219], in studies that attempted to suppress the incorporation of C for achieving high-performance p-type N-doped ZnO. Experimentally, it was reported that C sp2 clusters, which are graphite-like along grain boundaries [220,221], were found in undoped [217,222] and N-doped ZnO [216,221,222].…”

Section: Carbon Co-doping Effectsmentioning

confidence: 99%

A brief review of co-doping

et al. 2016

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Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

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The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

Cited by 12 publications

References 28 publications

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

A brief review of co-doping

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