The influences of V and Gd dopants on the structures and electrical and magnetic properties of PbPdO₂ thin films

Abstract

PbPdO2, PbPd0.9V0.1O2 and PbPd0.9Gd0.1O2 films with the preferred orientation of (002) and room temperature ferromagnetism were prepared by PLD technique.

Effects of V and Gd doping on novel positive colossal electroresistance and quantum transport in PbPdO2 thin films with (002) preferred orientation

“…PbPd 0.9 V 0.1 O 2 and PbPd 0.9 Gd 0.1 O 2 nanoparticles were synthesized by a sol-gel method using high-purity raw materials, namely Pb(NO 3 ) 2 (99.99%), Pd(NO 3 ) 2 (99.99%), V(NO 3 ) 2 (99.9%) and Gd(NO 3 ) 3 Á6H 2 O (99.99%), as reported in our previous work. 32 Subsequently, PbPd 0.9 V 0.1 O 2 and PbPd 0.9 Gd 0.1 O 2 thin films with (002) preferred orientation were deposited on single-crystal MgO substrates oriented along the (100) orientation by a PLD technique. A KrF excimer laser with a wavelength of 248 nm was used as the energy source for target ablation.…”

“…Here, the doping of Gd ions can enhance Pd-O hybridization in the PbPdO 2 lattice, while the doping of V ions will weaken Pd-O hybridization. 32 Thus, the percentage of Pb vacancies changes obviously after heat treatment of the films.…”

Effects of Mn doping on electronic and quantum transport in PbPdO2 thin films

“…The intriguing physical properties attracted a bunch of researchers, who have experimentally studied a spectrum of metal cation doping in PbPdO 2 thin lms, including Mn, Fe, Co, V, Gd, Cu, Zn and Li. [3][4][5][6][7][8][9][10] Additionally, Jia et al also studied the Co-F co-doping effects of PbPdO 2 and discussed the inuence of anion doping on PbPdO 2 in detail. 11 In addition, various properties of PbPdO 2 have been studied, such as the effects of nanograin size and strain engineering, strong spin-orbit coupling based on magnetic properties, and multi-magnetic coexistence based on carrier-mediated mechanisms.…”

“…For example, Cu doping enhance the resistivity and thermoelectric power of the material; Co doping decreases the mobility of the material carrier; Zn doping not only reduces the resistivity of the material, but also makes the sample diamagnetic, and so on. [3][4][5][6][7][8][9][10][11][16][17] Manganese-doped semiconductors show a variety of magnetic properties, [18][19][20] including paramagnetism (PM), antiferromagnetism (AFM), ferromagnetism (FM) and spin glass states, which other elemental doping do not have. Firstreported Mn-doped PbPdO 2 in 2011 was synthesised by Lee et al, in which Mn-doped PbPdO 2 pellets were obtained by solid phase reaction and their magnetic properties were studied in detail.…”